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OptiFuse MID-100A Fuse: fuse; 42x12x8.2mm; automotive; 100A; 32VDC; MIDI ANL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MID-100A				100	1 - 10 - 100 $8.96 1000 $8.00 10000 $8.00	Get Quote
RS	MID-100A	Bulk	4	1 Weeks	1	1 $9.01 10 $8.56 100 $8.56 1000 $8.56 10000 $8.56	Buy Now
Master Electronics	MID-100A					1 - 10 $5.35 100 $3.37 1000 $2.08 10000 $1.98	Buy Now
Others MID-100A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
PUI	MID-100A		408			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ID100A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT30M30B2LL Abstract: APT30M30LLL Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt30m30b2ll apt30m30lll o-264 o-247	PDF
A20M18LVFR Abstract: APT20M18B2VFR Contextual Info: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt20m18b2vfr a20m18lvfr o-264 o-247	PDF
APT20M16B2LL Abstract: APT20M16LLL 050701 Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m16b2ll apt20m16lll o-264 o-247 +1050701	PDF
Contextual Info: APT20M16B2FLL APT20M16LFLL 200V 100A 0.016Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m16b2fll apt20m16lfll o-264 o-247	PDF
Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m20b2ll apt20m20lll o-264 o-247	PDF
APT20M16B2FLL Abstract: APT20M16LFLL Contextual Info: APT20M16B2FLL APT20M16LFLL 200V 100A 0.016Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m16b2fll apt20m16lfll o-264 o-247	PDF
BV 030 7162 Abstract: APT30M30B2FLL APT30M30LFLL Contextual Info: APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt30m30b2fll apt30m30lfll o-264 o-247 +1bv 030 7162	PDF
Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m16b2ll apt20m16lll o-264 o-247	PDF
Contextual Info: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt20m18b2vfr a20m18lvfr o-264 o-247	PDF
Contextual Info: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt20m18b2vr a20m18lvr o-264 o-247	PDF
218F Abstract: APT20M20B2LL APT20M20LLL Contextual Info: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	apt20m20b2ll apt20m20lll o-264 o-247 +1218f	PDF
APT10M09B2VFR Abstract: APT10M09LVFR Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt10m09b2vfr apt10m09lvfr o-264 o-247	PDF
Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt10m09b2vfr apt10m09lvfr o-264 o-247	PDF
A20M18LVR Abstract: APT20M18B2VR Contextual Info: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	apt20m18b2vr a20m18lvr o-264 o-247	PDF