300C
Abstract: IRG4CC40RB
Contextual Info: PD- 93975 IRG4CC40RB IRG4CC40RB IGBT Die in Wafer Form C 600 V Size 4 Standard Speed Short Circuit Rated 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4CC20RB
Contextual Info: PD- 93974 IRG4CC20RB IRG4CC20RB IGBT Die in Wafer Form C 600 V Size 2 Standard-Speed, Short Circuit Rated 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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1kA IGBT
Abstract: IRG4CH30KB 300C IRG4PH30K
Contextual Info: PD- 91767 IRG4CH30KB IRG4CH30KB IGBT Die in Wafer Form C 1200 V Size 3 Ultra Fast Speed Short Circuit Rated 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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irg4ch30kb150mmirg4ph30k1ka igbt+1300c
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300C
Abstract: IRG4CC72KB
Contextual Info: PD- 91868 IRG4CC72KB IRG4CC72KB IGBT Die in Wafer Form C 600 V Size 7.2 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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for IR IGBT die
Abstract: 300C IRG4BC10S IRG4CC10SB
Contextual Info: PD- 91827 IRG4CC10SB IRG4CC10SB IGBT Die in Wafer Form C 600 V Size 1 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4PF50W DATASHEET
Abstract: 300C IRG4CF50WB IRG4PF50W
Contextual Info: PD -94307 IRG4CF50WB IRG4CF50WB IGBT Die in Wafer Form C 900 V Size 5 Warp Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.11V Max.
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2 SK 0243
Abstract: 300C IRG4CH40SB IRG4PH40S
Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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300C
Abstract: IRG4CH50SB irg4ch50s ir igbt 1200V 10A
Contextual Info: PD- 91770 IRG4CH50SB IRG4CH50SB IGBT Die in Wafer Form C 1200 V Size 5 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage
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irg4ch50sb150mmirg4ph50sb300c+2irg4ch50sir igbt 1200v 10a
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300C
Abstract: IRG4CC50SB IRG4PC50S irg4pc
Contextual Info: PD- 91829 IRG4CC50SB IRG4CC50SB IGBT Die in Wafer Form C 600 V Size 5 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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Wafer
Abstract: IRG4CH50KB 300C IRG4PH50K
Contextual Info: PD- 91763 IRG4CH50KB IRG4CH50KB IGBT Die in Wafer Form C 1200 V Size 5 Ultra Fast Speed Short Circuit Rated 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4CC40WB
Contextual Info: PD-94075 IRG4CC40WB IRG4CC40WB IGBT Die in Wafer Form C 600 V Size 4 WARP Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4CC40FB
Abstract: 300C IRG4PC40F
Contextual Info: PD- 91761 IRG4CC40FB IRG4CC40FB IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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300C
Abstract: IRG4BC20F IRG4CC20FB
Contextual Info: PD- 91831 IRG4CC20FB IRG4CC20FB IGBT Die in Wafer Form C 600 V Size 2 Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4CC50FB
Abstract: 300C IRG4PC50F
Contextual Info: PD- 91828 IRG4CC50FB IRG4CC50FB IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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300C
Abstract: IRG4BC30F IRG4CC30FB
Contextual Info: PD- 91758 IRG4CC30FB IRG4CC30FB IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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Contextual Info: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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ices
Abstract: 300C IRG4CC58KB
Contextual Info: PD- 91870 IRG4CC58KB IRG4CC58KB IGBT Die in Wafer Form C 600 V Size 5.8 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4CC71KB IRG4PSC71K
Contextual Info: PD- 91834 IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4BC30F IRG4CC30FB
Contextual Info: PD- 91758 IRG4CC30FB IRG4CC30FB IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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300C
Abstract: IRG4CC77KB for IR IGBT die
Contextual Info: PD- 91867 IRG4CC77KB IRG4CC77KB IGBT Die in Wafer Form C 600 V Size 7.7 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4CC50SB IRG4PC50S
Contextual Info: PD- 91829 IRG4CC50SB IRG4CC50SB IGBT Die in Wafer Form C 600 V Size 5 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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ir igbt 1200V 10A
Abstract: 1kA IGBT 300C IRG4CH40SB IRG4PH40S
Contextual Info: PD - 91799 IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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300C
Abstract: IRG4BC20K IRG4CC20KB
Contextual Info: PD- 91824 IRG4CC20KB IRG4CC20KB IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast-Speed, Short Circuit Rated Speed G E 6" Wafer Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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300C
Abstract: IRG4CH40SB IRG4PH40S
Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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