IRG4PC Search Results

IRG4PC30FD

Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC40F

Contextual Info: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC60U

Contextual Info: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

IRG4PC50U

Abstract: IRG4PC50
Contextual Info: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

AN-994

Abstract: IRG4PC60U-P power supply for igbt driver to247 pcb footprint
Contextual Info: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power

IRG4PC50S-P

Abstract: IRG4PC50S IRG4PC50
Contextual Info: PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC40KD

Contextual Info: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

IRG4PC50F

Abstract: GE40-20
Contextual Info: PD 91468C IRG4PC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC50KDPBF

Abstract: 035H IRFPE30
Contextual Info: PD- 95235 IRG4PC50KDPbF • Lead-Free www.irf.com 1 05/04/04 IRG4PC50KDPbF 2 www.irf.com IRG4PC50KDPbF www.irf.com 3 IRG4PC50KDPbF 4 www.irf.com IRG4PC50KDPbF www.irf.com 5 IRG4PC50KDPbF 6 www.irf.com IRG4PC50KDPbF www.irf.com 7 IRG4PC50KDPbF 8 www.irf.com

IRG4PC40UD

Abstract: transistor igbt
Contextual Info: PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC30FD

Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IC OZ 9936

Abstract: IRG4PC50K IRGPC50K IRGPC50M 91583B
Contextual Info: PD - 91583B IRG4PC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

TO-247AC Package igbt

Abstract: AN-994 IRG4PC60F-P 60A 150V IGBT
Contextual Info: PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

IRG4PC30UD

Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

ic c 838

Abstract: IRG4PC30KD IRGBC30KD2 IRGBC30MD2
Contextual Info: PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PC50KD

Contextual Info: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,

G4PC30F

Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Contextual Info: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r

Contextual Info: PD-9.1583 International TOR Rectifier IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 [is@ 125°C, VGE = 15V

Contextual Info: International I f â R Rectifier PD 9.1467D IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

irg4pc40u

Contextual Info: International XOR Rectifier PD - 9.1466D IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

250VJA

Abstract: irg4pc50u equivalent
Contextual Info: International IGR Rectifier PD-9.1470E IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter

Contextual Info: PD - 9.1463A International I R Rectifier IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: O ptim ized for medium operating frequencies 1 -5 kHz in hard switching, >20 kH z in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

Contextual Info: PD - 9.1459A International TGR Rectifier IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter