ICE13N65 Search Results
ICE13N65 Datasheets Context Search
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Contextual Info: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
Original |
ice13n65fp250uao-2200e-06+3 | |
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Contextual Info: ICE13N65 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
Original |
ice13n65250uao-220100us+6 |