ICC3 ICC1 Search Results

icc3

Abstract: M57788SH 3125V m577
Contextual Info: Graph f-Po M57788SH Pout,Icc vs. freq. 12 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm 50 Po W Icc1 (A) Icc2 (A) Icc3 (A) Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 2 10 1 460 470 480 490 500 freq.(MHz) -1- 510 520 530 540 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)

icc3

Abstract: M57788UH 3125V M5778 M57788
Contextual Info: Graph f-Po M57788UH Pout,Icc vs. freq. 12 Po W Icc1 (A) Icc2 (A) Icc3 (A) 50 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 10 2 1 440 450 460 470 480 freq.(MHz) -1- 490 500 510 520 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)

80 pin simm flash

Abstract: 45/EDI8F16256C-M
Contextual Info: \ Selector Guide ELECTRONIC DESI3NS INC Of nsity Organization Part No. Speed ns NEW ✓ ✓ ✓ ✓ Page LP Signifies that a Low Power Version with Data Retention function is available x8 SRAMs ✓ Package Max Current (mA) ICC1 ICC3 2: Megabits 256KX8 EDI8F8257C-B6CLP

256KX8 SIMM

Abstract: 80 pin simm flash
Contextual Info: WDl Selector Guide ELECTRONIC DESIGNS INC. Density Organization Part No. Speed ns NEW Max Current (mA) ICC1 ICC3 ✓ ✓ V ✓ 256Kx8 2 2 4 4 256Kx8 256Kx8 512Kx8 512Kx8 512Kx8 Megabits Megabits Megabits Megabits EDI8F8257C-B6ClP EDI8F8257C-BPCLP EDI8F8259C-M6C

B1242

Abstract: free TSOP 1738 SMD A11L b1241 SMK2-67025EV-30SV qml-38535 75A8L tsop 1738 SMD package ASTM B32 AOR-A12R
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5, conditions column. - glg

EM78P156ELP

Abstract: EM78P156 pin configuration of em78p156 EM78P156ELP application EM78P156ELM EM78P156E AN-003 EM78P156EL EM78P156ELAS EM78P156ELKM
Contextual Info: EM78P156EL OTP ROM EM78P156EL 8-BIT MICRO-CONTROLLER Version 1.3 EM78P156EL OTP ROM Specification Revision History Version Content 1.0 Initial version 1.1 Change set up time period 1.2 04/19/2002 Change Power on reset content 07/01/2003 Change ISB1 & ICC3 current range

IDT7025S35GB

Abstract: qml-38535 5962-9161708MXA IDT7025L45FB smd marking 5R TSOP 66 thermal resistance SMK2-67025EV-30SV SMD MARKING CODE UBR
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5 conditions column. - glg

zobel

Abstract: 500w power amplifier stereo ENA0177 icc3 icc1 sanyo 16 10X10 AES17 Class-d amplifier BTL audio 100w 100w audio amplifier circuit diagram
Contextual Info: Ordering number : ENA0177 Monolithic Linear IC ICC1 PWM Controller IC for Digital Power Amplifier Overview Control chip for high performance stereo class-d amplifier with power range from 20-500W. Used together with the ICC3 driver chip the system will include a full protection scheme including: current limitation, short circuit protection, thermal

smd transistor A7R marking

Abstract: smd transistor marking a5l smd dual diode A4l smd diode a3l A1L smd diode smd a4l smd marking A5L A1L smd qml-38535 smd dual diode code A4l
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5, conditions column. - glg

CDC2509

Abstract: MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT Revision History Revision .2 Jan. 1998 •DC Characteristics values are changed. : ICC2 N & ICC3 N •STANDARD TIMING DIAGRAM is changed . •All AC parameters are measured by module tap reference(refer to page#5) •CAS Latency is based on Reg. DIMM (In case of Unbuff. DIMM CAS Latency is 1 CLK earlier than this)

icc3 icc1

Abstract: icc3 M68762H ICC-301 490mhz
Contextual Info: MITSUBISHI RF POWER MODULE M68762H 440-490MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY

M68762L

Contextual Info: MITSUBISHI RF POWER MODULE M68762L 400-450MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY

M57788HR

Abstract: 450-470-MHz
Contextual Info: MITSUBISHI RF POWER MODULE M57788HR 450-470MHz, 13.5V, 47W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 4 51.5±0.5 1 5 2-R2±0.5 5 4 3 2 1 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY

M57788LR

Abstract: 430-MHz 400-430MHZ
Contextual Info: MITSUBISHI RF POWER MODULE M57788LR 400-430MHz, 13.5V, 47W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 60±0.5 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 5 4 3 2 1 6 6 0.82±0.2 10.5±1 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY

CXK5T16100TM

Contextual Info: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.

icc3

Abstract: CXK5V16100TM
Contextual Info: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this

4T2R

Contextual Info: ^EDI Electronic Designs Inc. High Speed with Low Power CMOS SRAM Performance CMOS Static RAMs consume less power than previous Static RAM technologies and are capable of extremely low Low Power power consumption when operating either in standby or different power requirements for each. These five regions,

Contextual Info: SONY CXK5V16100TM - 8 5 L L X /1 Q L L X 65536-word x 16-bit High Speed CMOS Static RAM Description C X K 5V 1 610 0T M is a general purpose high speed C M O S static R A M organized as 6 5 53 6-w o rd s by 16-bits. Operating on a single 3.3 V supply, this

M68706H

Contextual Info: MITSUBISHI RF POWER MODULE M68706H 300-308MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.8±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY

BA 5053

Contextual Info: MITSUBISHI RF POWER MODULE bSMTôÉ?1} 0Q17273 l t a - - h bTa " M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING Dimansions in mm BLOCK DIAGRAM > © hK >M > hhi> PIN : Pin : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0VCC3 : 3rd. DC SUPPLY

5 pin A13E

Abstract: a13e ic
Contextual Info: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

2864b

Abstract: S-2860B S-2864B PARALLEL E2PROM
Contextual Info: Contents Features 1 Pin Assignment 1 Block Diagram 2 Operation Mode 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 8 Dimensions 9

Contextual Info: Contents Features 1 Pin Assignment 1 Block Diagram 2 Operation Mode 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 8 Dimensions 9

2817A

Abstract: S-2817A 2817A-4 Parallel PROMs S-2812A
Contextual Info: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Operation Mode . 2