ICC02 Search Results

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TMM24256P

Abstract: AF150 TC54256P TTL af tc54256ap
Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access

DS1238

Abstract: DS1238-5 DS123S DS1336 MAX691
Contextual Info: DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Holds microprocessor in check during power transients • Halts and restarts an out-of-control microprocessor • Warns microprocessor of an impending power failure •C7 [ 1 16 ] vcco[ 2 15 ] RST v c c [ 3

DS1210N

Contextual Info: 19-6294; Rev 6/12 DS1210 Nonvolatile Controller Chip FEATURES • •         PIN ASSIGNMENT Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when

DS1210

Abstract: DS1210S DS1610 DS1610S ICC01
Contextual Info: DS1610 DS1610 Partitioned NV Controller FEATURES PIN ASSIGNMENT • Converts CMOS RAMs into nonvolatile memories • SOIC version is pin compatible with the Dallas Semiconductor DS1210 NV Controller • Unconditionally write protects all of memory when Vcc

Contextual Info: D S 1 31 4 PRELIMINARY DS1314 3V Nonvolatile Controller with Lithium Battery Monitor DALLAS SEMICONDUCTOR FEATURE PIN ASSIGNMENT • Converts CMOS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when Vcc is out of tolerance ^ ^cci VccoOC

Contextual Info: DS1236 P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES • Holds microprocessor in check during power transients • Halts and restarts an out-of-control microprocessor • Monitors push-button for external override • Warns microprocessor of an impending

8a21

Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Contextual Info: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION

Contextual Info: PIN ASSIGNMENT FEATURES • Provides Real Time Clock: - Counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 - Power control circuitry supports system power on from day/time alarm

Contextual Info: DSI 321 P R E L IM IN A R Y DS1321 Flexible Nonvolatile Controller with Lithium Battery Monitor DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEA TU RES • Converts CM OS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when V q c is out of tolerance

Contextual Info: DALLAS DS1610 Partitioned NV Controller s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Converts CM O S RAMs into nonvolatile memories Vcco • Write protects selected blocks of memory regardless of V qc status when programmed • Automatically switches to battery backup supply

switch mode power supply

Abstract: DS1236 DS1236-5 DS1336 ICC01 ST 12 55C
Contextual Info: DS1236 DS1236 MicroManager Chip FEATURES PIN ASSIGNMENT • Holds microprocessor in check during power transients 1 16 RST VCCO 2 15 RST VCC 3 14 PBRST VBAT 1 16 RST GND 4 13 CEI VCCO 2 15 • Warns microprocessor of an impending power failure VCC PF 12 3

NM29N16S

Abstract: C1996 ICC01 NM29N16 NM29N16R
Contextual Info: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read

ds1210s

Contextual Info: DS1210 Nonvolatile Controller Chip www.maxim-ic.com FEATURES § § § § § § § § § § § Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when Power-Fail Occurs

Contextual Info: DS1384 DALLAS SEMICONDUCTOR DS1384 Watchdog Timekeeping Controller FEATURES PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, m in­ utes, hours, days, date of the month, months, and years with leap ye a r com pensation valid up to 2100 • W atchdog tim er restarts an o u t-o f-co n tro l processor

Contextual Info: DS1314 PRELIM INARY DALLAS SEMICONDUCTOR DS1314 3V Nonvolatile Controller with Lithium Battery Monitor FEATURE PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite-p rote cts SRAM when out of tolerance Vqq is • Autom atically switches to b attery-backup supply

1312s

Contextual Info: D S1312 DS 13 1 2 Nonvolatile C ontroller with Lithium Battery M onitor DALLAS SEMICONDUCTOR F EA T U R ES PIN A S S IG N M E N T • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite -p ro te cts SRAM when out of tolerance Vqq is • Autom atically switches to battery backup supply

F475

Contextual Info: DS1312 DS1312 DALLAS SEMICONDUCTOR N onvolatile C ontroller with Lithium Battery M onitor FEATURES PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile memory • Unconditionally write-protects SRAM when out of tolerance Vqq is • Automatically switches to battery backup supply

TC88411F

Abstract: TC88411
Contextual Info: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

TC5816

Abstract: TC5816AFT
Contextual Info: INTEGRATED 'OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ARSILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

TC57258AD-15

Abstract: TC57256D TC57256AD-20
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC57256AD-15, TC57256AD-20 IDESCRIPTION] The TC57256AD is a 32,768 w o r d x 8 bit CMOS ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TC57256AD's access time is 150ns,and the TC57256AD operates from a single 5-volt power supply and has low power

DS1259

Abstract: MAX1259 MAX1259C MAX1259CPE MAX1259CWE MAX1259EPE MAX1259MJE
Contextual Info: 19-4638; Rev. 1; 4/94 M A X 1259 B a tte ry M an ag er j G e n e ra l D e s c rip tio n The MAX1259 battery m anager provides backup-battery sw itching for CMOS RAM, m icroprocessors, or other low-power logic ICs. It autom atically switches to the backup battery when the prim ary power supply is inter­

NM29N16ES

Abstract: C1996 ICC01 NM29N16E
Contextual Info: NM29N16E 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16E is a 16 Mbit (2 Mbyte) NAND FLASH which operates over the industrial (b40 C to a 85 C) temperature range The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes

DS1236

Abstract: DS1236A DS1236A-5 DS1336
Contextual Info: DS1236A MicroManager Chip w w w.dalsem i.com PIN ASSIGNMENT FEATURES • Holds microprocessor in check during power transients ■ Halts and restarts an out-of-control microprocessor ■ Monitors pushbutton for external override ■ Warns microprocessor of an impending power