IC T100 Search Results

CXD1255Q

Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Contextual Info: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video

ir 847p

Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)

cmos sensor

Abstract: 8 PIN CMOS sensor pin diagram T100 6 pin ic T100 T100
Contextual Info: CMOS Sensor Inc T100 CMOS temperature sensor IC GENERAL DESCRIPTION The T100 is a high precision CMOS temperature IC. The output voltage is very linear for the temperature changes. It consists of a temperature sensor, a constant current source and an extra low current operational amplifier. The T100 can

U6083B

Abstract: transistor 81 110 w a4
Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for use in the brightness con­

Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness

Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness

U6084B

Abstract: U6084B-FP VT100
Contextual Info: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness

by 028

Contextual Info: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty-Cycle Reduction Description The U6084B is a PWM-IC in bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for the use in

la71750

Abstract: la71750em
Contextual Info: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.

LA71750

Abstract: 2sc331 transistor t87a 2SC331 equivalent datasheet diode t87a diode T87A diode T74A LA71750EM 2SC331 bit 3252a
Contextual Info: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.

Contextual Info: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness

Contextual Info: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness

U6081B

Abstract: VT100 v726
Contextual Info: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty Cycle Switch Off Description U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

dcf77 ferrite antenna

Abstract: dcf77 AM RECEIVER ferrite antenna MAS6181 dcf77 DA6181B MAS6181B MAS6181B1UC06 KDS Crystals 77,5 AN-T702Lxx
Contextual Info: DA6181B.001 18 November, 2010 MAS6181B AM Receiver IC * * * * * * * Dual Band Receiver IC High Sensitivity Very Low Power Consumption Wide Supply Voltage Range Power Down Control Control for AGC On High Selectivity by Crystal Filter Fast Startup Feature DESCRIPTION

Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

MARKING CODE 15

Abstract: 2SA1759 2SC4505 T100
Contextual Info: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and

2SC5824

Contextual Info: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

2scr375

Contextual Info: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)