IC T 352 Search Results

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

ay-5-8100

Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
Contextual Info: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators

HC-88

Abstract: hc81
Contextual Info: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .

proximity card

Abstract: AT05SC4808RF HC05
Contextual Info: S ECURE IC A PPLICATIONS ck. a . r DUAL-INTERFACE IC S FOR T RANSPORT AND . st t h us e fa r he n th t ACCESS CONTROL t o Bea get . Atmel’s secure dual-interface contact/ Image: Postscriptum contactless ICs are just the ticket for mass transport and access control

Contextual Info: P A N E L IN D IC A T O R LEDs - T e c h n ic a l Info. SERIES MAX. POWER DISSIPATION MAX. REVERSE VOLTAGE PANEL CUTOUT MIN. MOUNTING CENTRES MAX. PANEL THICKNESS 307 425 352 500 315 500 3 319 500 3 BODY LENS PANEL WASHER RETAINING CLIP 3 4.8 10.0 3 6.35

TDA10048

Abstract: TDA10048HN TDA18211 dvb-t demodulator with TV signal identification Chungho Elcom IC 935 TDA10048 package ic 931 681000 dvb t receiver
Contextual Info: TDA18211HD DVB-T Silicon Tuner IC Rev. 05 — 2 June 2009 Product data sheet 1. General description The TDA18211HD is a Silicon Tuner IC designed for digital terrestrial DVB-T TV reception. The TDA18211HD integrates the overall tuning function, including selectivity,

Contextual Info: T e m ic TSC80251G2D Semiconductors 8/16-bit Microcontroller Interfaces with Serial Communication 1. Description The TSC80251G2D products are derivatives of the T em ic Microcontroller family based on the 8/16-bit C251 Architecture. This family of products is tailored

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

TDA 7277

Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Contextual Info: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N

Contextual Info: HITACHI/ LINEAR DEVICES 2bE D • MHRbSGH 0011241 3 HA13118 T-74-OS-Û) 18 W B T L Audio Power Amplifier T he H A 13118 is pow er IC designed for component car stereo amplifiers. At 13.2 V to 4 £1 load, this power IC provides an output power of 18W with 10% distortion.

2ssm

Abstract: R080-187B
Contextual Info: SPECIF ICAT ION CONTROL DRAWING PA R T ID E N T IF IE R : R080-187B -X-X TOLERANCE VALUE D E S C R IP T IO N : ROD R ESISTO R , BERYLLIA A SSEM BLY DW G: R080-187B S P E C IF IC A T IO N S : •E L E C T R IC A L : RESISTANCE RANGE: 10 OHMS TO 50 OHMS* 1 % , 2% OR 5%

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

BA4230F

Contextual Info: ROHM CO LTD 7ÛEflcm 4QE D 00044ÔG 3 BRHM IC /IC s for Audio Applications BA44037 1,5V FM 7 P > M > K IC 1.5V FM Front End IC • BA4408FÜ, 1,5V-fe y h fflK ftjfc 0 BA4408F tcFM7 'T - 7 7 - O S - o S ' j^lS /D im en sio ns Unit : mm P ^ hI > K ffllCT'to

transistor P9d

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS 3 8 1 8 Group S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION • T i m e r s . . 8 - b i t X 6 The 3 8 1 8 g ro u p is 8 - b it m ic ro c o m p u te r b a s e d on th e 7 4 0

D 8243 HC

Abstract: SO3A 6164 ram rb1-e N74S00 ITT301 N74S04 B177 55604A CD 5888
Contextual Info: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith

diode LT 42 PR 3002

Abstract: 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141
Contextual Info: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith

Contextual Info: B45196L2106M209 aka T495B106M010ZTA3K0 Capacitor, tantalum, 10 uF, 3528, +/-20% Tol, 10V@85C + B o t t o m Vie w T o p Vie w P o la r it y F In d ic a t o r Ke m e t m a y c o n s t ru c t a t e r m in a l s lo t o n t h e p o s it iv e s id e a t K e m e t s O p t io n

STR-F6658B

Abstract: F6658B strf6658 STRF6658B LF1351 STR-F6558B STR-F6653 strf6558b STR-F6658 strf6558
Contextual Info: iVt •iqp '00 0 ^ :? ? p r i SAh*<EM 3 2 7 2 - E l ¿15 .? SA N KEN E L E C T R IC COMPANY, LT D . K A/, f t *& i i £ .0 S P E C IF IC A T/O N S D EV ECE T Y P E * ^ v ^ ^ NAM E L. * * ^ u ^ S T R -F6 6 5 8 B L F 1 S S I3 Switching regulator cype 5 T R -F$6 3 8 B (LF1 3 5 1

Contextual Info: B45196L3106K209 aka T495B106K016ZTA2K5 Capacitor, tantalum, 10 uF, 3528, +/-10% Tol, 16V@85C + B o t t o m Vie w T o p Vie w P o la r it y F In d ic a t o r Ke m e t m a y c o n s t ru c t a t e r m in a l s lo t o n t h e p o s it iv e s id e a t K e m e t s O p t io n

LUBRICANT telcordia

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED ALL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 2 3 LOC P U B L IC A T IO N R IG H T S RESERVED. AD C O R P O R A TIO N . REVISIONS D IS T 00 LTR A CONTAC D E S C R IP T IO N REVISED PER

Contextual Info: * r z z 7/. S G S -T H O M S O N S T H 221 M U L D E X IC FO R M U L T IM E D IA T E L E S E R V IC E S • HCMOS SEA OF GATE TECHNOLOGY ■ 64 PINS QUAD FLAT PACKAGE ■ TWO MODES OF OPERATION: STAND­ ALONE, MICROPROCESSOR ■ INTERFACE FOR 8/16/32 BIT MICROPRO­

21ALP4

Abstract: 21al B6-63 21-INCH Scans-0017361
Contextual Info: ET-T1140A 21ALP4 TUBES Page 1 CATHODE-RAY TUBE 21-INCH R E C T A N G U LA R , G L A S S F O C U S — LO W -V O LT A G E ELEC T R O S T A T IC \ 9 V t- BY 15-INCH PICTURE SIZE F A C E P L A T E — S P H ER IC A L, G R A Y IO N -TR A P GUN EX T ER N A L C O N D U C T IV E C O A T IN G

H-17

Abstract: H-18 H-19
Contextual Info: = m o s ^ - o ía ^ f í. ü L Ä i^ m ü E 8 2 9 8 8 M ) B1 82 til. m. V cES Si V CES Ic -il ft * I CP I Pc F (lms) (lm s ) T, T .t, V iao c m W ) I 1 GES ( n A) V CES V GE (mA) (V) ft "vö T T c= 2 5 5Co &2. Ic V CE (V ) 6 20 6 20 600 3 6 20 50 2.5 15