IC MOSFET QG 6 PIN Search Results

Contextual Info: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: IRF8910PbF-1 HEXFET Power MOSFET VDS 20 RDS on max V 13.4 (@VGS = 10V) mΩ RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 7.4 nC 10 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

motor driver ic 7324

Abstract: UCCx7324 parallel mosfet UCC27324 UCCx7325 UCC37324 SLUP133 UCCx7323 15-V UCC27323
Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492A – DECEMBER 2001 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D D D D D D Miller Plateau Region

M3481

Abstract: TSM3481CX6
Contextual Info: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )

TSM3460CX6

Abstract: 4300 MOSFET s54 mo TSM3460
Contextual Info: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V

55n03

Abstract: marking 1AJ MOSFET 55N03 TSM55N03
Contextual Info: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3

Contextual Info: IRF8113PbF-1 HEXFET Power MOSFET VDS 30 RDS on max V 5.6 (@VGS = 10V) mΩ RDS(on) max 6.8 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 24 nC 17.2 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

SLUS492B

Abstract: UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC27323 15-V POWER MOSFET
Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

TSM4410

Abstract: TSM4410CS D0351
Contextual Info: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain

mosfet low vgs

Abstract: I1020
Contextual Info: v G en eral S e m ic o n d u c t o r # _ GF6968E Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Low VGS th Vds 20V RdS(ON) 22mQ Id6.5A DO Pin 1 = 0 Pin 2 = Si Pin 3 = Si Pin 4 = Gì Pin 5 = G 2 Pin 6 = S2 Pin 7 = S2 Pin 8 = D

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES

Contextual Info: Tem ic SÌ6436DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) r DS(on) (£2) 30 0.045 @ VGs = 10 V 0.070 @ VGS = 4.5 V I d (A) ±4.4 ±3.5 TSSOP-8 Dd S [T sd G IT • SÌ6436DQ ~H D T ]S TI S T ]d O- G JE * Source Pins 2, 3, 6 and 7

Contextual Info: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q) 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V 20 I d (A) ±5.4 ±4.9 D Q TSSOP-8 Ò s* *Source Pins 2, 3. 6, and 7 must be tied common. TSSOP-8 Top View N-Channel MOSFET

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

Contextual Info: IRF7205PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 0.07 Ω 0.13 Ω 27 nC -4.6 A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

Contextual Info: IRF7103PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 50 V 0.13 Ω 0.20 Ω 12 nC 3.0 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

15-V

Abstract: UCC27323 UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC37324 equivalent POWER MOSFET
Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

Contextual Info: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS… IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

TEXAS INSTRUMENT N PACKAGE DIMENSION

Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

UCCx7323

Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

UCC27324

Contextual Info: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D

IRF9310PBF

Abstract: IRF9310
Contextual Info: IRF9310PbF-1 HEXFET Power MOSFET VDS -30 RDS on max V 4.6 (@VGS = -10V) mΩ RDS(on) max 6.8 (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) 58 nC -20 A S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques