IC MARKING YK Search Results

NPN SOT-23 MARKING Wj

Abstract: NPN SOT-23 WF NPN SOT-23 MARKING WF marking WJ sot-23 marking T02 sot-23 CHDTC114YU marking eua Marking 723 SOT-23 723 SOT-723 SOT-723
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline

WK2 94V0

Abstract: wk2 94v-0 transistor wu1 wk1 sot-23 wk2 sot 23 94v0 wk2 marking wk1 wu1 sot-23 marking wk2 marking wu1
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline

Flyback Xfmr

Abstract: hi pot 9B MARKING
Contextual Info: 1. M e c h a n ic a l D im e n s io n s : 2 . S c h e m a t ic : LU Û a u m L . —opqtrrq-irrq-Q-rq-Q— oJ IcpJ Lq J Lq J Lo _ _Í -o 9 2 o- P ri I 1 Sec 3 O- T 1 -o 8 Pri 2 Sec 2 40- f f l MARKING: ON TOP -o 7 3. E l e c t r i c a l S p e c if ic a t io n s :

8X2011

Abstract: MD0470211 MD-047 rocker switch diagram AC125V6A
Contextual Info: s M 8X T T "J K P ' ^ ^ I — Illuminated Rocker Switches T < V ? n $ K X •# ■ Features- * - 8X 7-f51&#39;yKci'y*— ÿ>7°&ïH M U zffi% 5ta-y

Indutor

Abstract: dc ac inverters
Contextual Info: DWN.: Juan Mao XFM RS CHK.:YK Liao DATE: A p r - 0 6 - 0 4 DATE:A p r - 0 6 - 0 4 XFHCLTH S E R IE S APP.: MS DATE: A p r - 0 6 - 0 4 POW ER IN DUTO RS * IDEAL FOR HIGH CU RREN T A PPLIC A T IO N S * FOR D C / D C * * MAGNETICALLY SH IE D LED FOR LOW N O ISE

2sc6096

Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

MAX4126

Contextual Info: ykiyjxivki 19-1087; Rev 1; 8/97 Single/Dual/Quad, W ide-Bandw idth, Low-Power, S i n g l e - S u p p l y Ra i l - t o - Ra i l I/O Op A m p s _ F e a t u r e s The MAX4122-MAX4129 family of operational amplifiers combines wide bandwidth and excellent DC accuracy with

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

BD46E475

Contextual Info: Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●Key Specifications  Detection voltage: ●General Description ROHM’s BD45Exxxx-M and BD46Exxxx-M series are highly accurate, low current consumption Voltage

BD46E475

Abstract: BD45E315
Contextual Info: Datasheet Voltage Detector IC Series Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●General Description ROHM’s BD45Exxxx-M and BD46Exxxx-M series are highly accurate, low current consumption Voltage Detector IC series. Because the counter timer delay

BD46E475

Abstract: BD45E315
Contextual Info: Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●Key Specifications  Detection voltage: ●General Description ROHM’s BD45Exxxx-M and BD46Exxxx-M series are highly accurate, low current consumption Voltage

BD46E475

Abstract: BD45E315
Contextual Info: Datasheet Voltage Detector IC Series Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series AEC-Q100 Qualified Key Specifications ̈ Detection voltage: General Description ROHM’s BD45Exxxx-M and BD46Exxxx-M series are highly accurate, low current consumption Voltage

BD46E475

Abstract: BD45E315
Contextual Info: Datasheet Voltage Detector IC Series Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx series BD46Exxxx series Key Specifications ̈ Detection voltage: General Description ROHM’s BD45Exxxx and BD46Exxxx series are highly accurate, low current consumption Voltage Detector IC

smd TRANSISTOR YK

Abstract: smd marking YK transistor yk 2SB1115 TRANSISTOR SMD PNP 1A ic marking YK marking YL smd pnp marking YK transistor marking YK
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115 Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage

Contextual Info: Product specification 2SB1115 Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage

TA 2911

Contextual Info: R N 2 9 1 RN2910 , 2 9 1 1 Unit in mm SW ITCH IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D D RIVER CIRCUIT APPLICATIONS. • • • • • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) With Built-in Bias Resistors Simplify Circuit Design

ic marking YK

Contextual Info: 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4901 Absolute Maximum Ratings Ta = 25°C

CE 2711

Contextual Info: RN2710,2711 RN2710 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (Ultra Super Mini Type with 5 leads) • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SILICON PNP EPITAXIAL TYPE RN2510, RN2511 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. Including Two Devices In SMV Super Mini Type with 5 Leads With built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SILICON PNP EPITAXIAL TYPE RN2710, RN2711 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ±0.1 1.25±0.1 A N D DRIVER CIRCUIT APPLICATIONS. • • • • • EQ UIVALENT CIRCUIT M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

em 329

Contextual Info: RN2510,2511 RN2510 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. 0.2 1.6+-0.1 Including Two Devices In SMV (Super Mini Type with 5 Leads) With b u ilt-in Bias Resistors I Simplify Circuit Design • ?■H-

Contextual Info: RN2410,RN2411 SILICON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5-0.3 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

inverter ic marking H.A

Abstract: ic marking YK
Contextual Info: SILICON PNP EPITAXIAL TYPE SW ITCHING, INVERTER CIRCUIT, RN2610, RN2611 INTERFACE CIRCUIT A N D U nit in mm DRIVER + CIRCUIT APPLICATIONS. + 0.2 1. 6 - 0.1 Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors Simplify Circuit Design