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SMD DATASHEET

Contextual Info: UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Product Highlights • Wide Operating Range: DC-9 GHz 40 pin Quad Flat No Lead QFN 6x6 mm pkg, 0.5 mm pad pitch JEDEC MO-220 Compliant UXN6M9P XXXX Marking Information: UXN6M9P = Device Part Number

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125°C Operation SPI BUS EEPROM BR35Hxxx-WC 16K 32K 64K 128K General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. Features „ „ „ „ „ „ „ „ „ „ „ „ „ Packages W(Typ) x D(Typ) x H(Max)

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR25H010-2C ●General Description BR25H010-2C is a serial EEPROM of SPI BUS interface method. ●Features „ High speed clock action up to 10MHz Max. „ Wait function by HOLDB terminal.

Contextual Info: Preliminary 1.8V-3.3V PicoPLL TM , 3-PLL, 200MHz, 5 Output Clock IC FEATURES DESCRIPTION • Designed for PCB space savings with 3 low-power Programmable PLLs and up to 5 clock outputs.  Low-power consumption (<10µA when PDB is activated)  Output frequency:

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR25H640-2C ●General Description BR25H640-2C is a serial EEPROM of SPI BUS interface method. ●Features „ High speed clock action up to 10MHz Max. „ Wait function by HOLDB terminal.

SMMBTA13LT1G

Abstract: SMMBTA14LT1G
Contextual Info: MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

Contextual Info: FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

H11AA814

Abstract: H11A817 H11A817A H11A817B H11A817C H11A817D H11AA814A H11A8
Contextual Info: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 2 3 EMITTER 4 1 DESCRIPTION H11A817 SCHEMATIC The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin

IRG4PC50UDPBF

Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PL611s-02 1.8V-3.3V PicoPLL TM , World’s Smallest Programmable Clock FEATURES DESCRIPTION • Lowest-power, smallest Programmable PLL  Very low Jitter and Phase Noise  Output Frequency up to: o 110MHz @ 1.8V operation o 166MHz @ 2.5V operation o 200MHz @ 3.3V operation

4025-C

Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS ON = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

6680 MOSFET

Abstract: FDD6672A
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: Datasheet General Purpose CMOS Logic IC Quad 2-Input NAND Schmitt Trigger BU4093B BU4093BF BU4093BFV General Description Key Specifications  Operating Supply Voltage Range:  Input Voltage Range:  Operating Temperature Range: BU4093B, BU4093BF, BU4093BFV consist of four

Contextual Info: Datasheet General Purpose CMOS Logic IC Quad 2-Input Hex Inverter BU4069UB BU4069UBF BU4069UBFV General Description Key Specifications  Operating Supply Voltage Range:  Input Voltage Range:  Operating Temperature Range: BU4069UB, BU4069UBF, BU4069UBFV consist of six

Contextual Info: DATA SHEET PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Contextual Info: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com

Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

ncp46

Abstract: AQ28 XDFN marking 255 SC-70 AQ25
Contextual Info: NCP4681, NCP4684 150 mA, Ultra Low Quiescent Current, Low Dropout Regulator The NCP4681 and NCP4684 are CMOS Linear voltage regulators with 150 mA output current capability and ultra low supply currents 1 mA typ. The devices are easy to use and include output current

to225a

Abstract: to225aa TO-225AA to225
Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −

Contextual Info: Datasheet General Purpose CMOS Logic IC Quad 2-Input Exclusive-OR Gate BU4030B BU4030BF General Description Key Specifications  Operating Supply Voltage Range: +3V to +16V  Input Voltage Range: 0V to VDD  Operating Temperature Range: -40°C to +85°C

LCD Gamma Buffers

Abstract: LCD gamma buffer low power mode
Contextual Info: BUF12800 SBOS315A − DECEMBER 2004 − REVISED JULY 2005 REFERENCE VOLTAGE GENERATOR for LCD GAMMA CORRECTION FEATURES D D D D D D D D D D D APPLICATIONS 12-CHANNEL GAMMA CORRECTION 10-BIT RESOLUTION DOUBLE-BUFFERED DAC REGISTERS INTEGRATED REFERENCE BUFFERS

TLA08AAA

Contextual Info: LM4889 LM4889 1 Watt Audio Power Amplifier Literature Number: SNAS157G LM4889 1 Watt Audio Power Amplifier General Description Key Specifications The LM4889 is an audio power amplifier primarily designed for demanding applications in mobile phones and other