RTC3001 Search Results

Contextual Info: RTC3001 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)45 I(C) Max. (A)150m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

RTC3001

Abstract: RTC3003 RTC3005 PKB32001U PKB32003U PKB32005U PTB32001X PTB32003X PTB32005X 32005U
Contextual Info: N AMER PHILIPS/DISCRETE QbE » • bbSBTBl 0015CH3 T ■ p k . B 3 2 u u iu PKB32003U PKB32005U MAINTENANCE TYPES for new design use PTB32001X, PTB32003X, PTB32005X M ICRO W AVE POWER TRANSISTO RS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.