IC 3207 POWER Search Results

TA2031

Abstract: TA-2031 CPH3107 CPH3207 ic 3207
Contextual Info: Ordering number:ENN6077 PNP/NPN Silicon Epitaxial Planar Transistors CPH3107/3207 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, and strobes. unit:mm 2150A [CPH3107/3207] 2.9 · Adoption of MBIT processes.

Contextual Info: Ordering number:ENN6077 PNP/NPN Silicon Epitaxial Planar Transistors CPH3107/3207 S A U m i DC/DC Converter Applications Applications Package Dimensions - Relay drivers, lamp drivers, motor drivers, and unit:mm strobes. 2150A [CPH3107/3207] Features 0 . 15-

Contextual Info: ^ SGS-THOMSON ül g¥M0(gS 7# 5 T DE3207 INTERFACE CIRCUIT (RELAY AND LAMP-DRIVER The TDE3207 is a monolithic amplifier designed for high-current and high-voltage applications, specifically to drive lamps, relays and stepping motors. INTERFACE CIRCUIT RELAY A N D LA M P DRIVER

0.1 uF non polarized capacitor

Abstract: CAM match transistor match sense line match sense nichia NSCW100 LTC3207-1 marking c2m
Contextual Info: LTC3207/LTC3207-1 600mA Universal Multi-Output LED/CAM Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Low Noise, Multi-Mode Charge Pump 1x, 1.5x, 2x Provides Up to 91% Efficiency Slew Limited Switching Reduces Conducted and

Contextual Info: LTC3207/LTC3207-1 600mA Universal Multi-Output LED/CAM Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Low Noise, Multi-Mode Charge Pump 1x, 1.5x, 2x Provides Up to 91% Efficiency Slew Limited Switching Reduces Conducted and

transistor c 3206

Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi

ZTX601

Abstract: ZTX600 DSA003770
Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

ZTX601

Contextual Info: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K

M 4 3171

Abstract: HSCH-3486 MIL-STD-750 METHOD 2036 HSCH-3171 HSCH-5018 HSCH-3206 HSCH-5019 lt 213 H-317 hsch 3486 zero bias schottky diode
Contextual Info: HSCH-3171 HSCH-3206/07 HSCH-3486 HSCH-5 0 1 8 /1 9 ZERO BIAS SCHOTTKY DETECTOR DIODES H E W L E T T ^ PACKARD COMPONENTS Features H IG H V O L T A G E S E N S IT IV IT Y N O B IA S R E Q U IR E D C H O IC E O F H IG H OR L O W V ID E O IM P E D A N C E

abb motors M2KA

Abstract: IEC 34-1 m2ja ABB - M3KP 180 MLB 4 abb m3jp 225 ABB - M3KP 200 MLC 2 1466 HO ABB - M3KP 160 MLC 4 abb 3GKp BU 3150
Contextual Info: Technical data – Flameproof motors M2JA/M3JP EEx d IIB/IIC T4 M2KA/M3KP EEx de IIB/IIC T4 IP 55, IC 411; Insulation class F, temperature rise class B Torque factor IN Is TN Ts Tmax J=1/4 GD 2 EEx d EEx de level LP cos ϕ A IN Nm TN TN kgm2 kg Type Product

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

schematic diagram tv sharp

Abstract: tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp
Contextual Info: NEW PRODUCT INFORMATION Primary Regulator PQ1PF1 O U T LIN E D IM E N S IO N S G E N E R A L D E S C R IP T IO N U n it : m m Sharp's PQ 1PF1 achieved an integration o f power M O SFET and control IC, used for primary sid e o f sw itch in g p ow er su p p lies. T h is d e v ic e m eets the n eed for m ore

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSU E 2 - FEBRUARY 1995_ FEATURES * 60 Volt V CE0 * 3 A m p c o n tin u o u s current * L o w Saturation v olta ge C O M P L E M E N T A R Y T Y P E - FZT751 P A R T M A R K IN G D E T A IL - FZT651

Contextual Info: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B

IC CD 3207

Abstract: echo reverb ic audio echo reverb ic echo sound ic echo delay reverb echo delay reverb ic ES3205 diagram dvd player single chip video processor ic reverb
Contextual Info: EES PRELIMINARY ES3207 Video CD/DVD Companion Chip Product Brief ESS Technology, Inc. OVERVIEW The ES3207 FEATURES Video C D /D VD C om panion Chip, an • enhanced version of the pin-com patible ES3205, provides - CCIR601 non-square operation - N TSC /PA L form ats

Contextual Info: 7 / 8 " TO 2 " DIAMETER SERVO MOUNT WIREWOUND 3, 5 AND 10-TURN PRECISION POTENTIOMETERS SERVO M O U N T/B A LL BEARING MODEL 3701 3701 SERVO MODEL ELECTRICAL 1 All specifications listed apply to units w ith a total resistance within the norm al resistance

Contextual Info: 7 /8 " TO 2" DIAMETER SERVO MOUNT WIREWOUND 3, 5 AND 10-TURN PRECISION POTENTIOMETERS SERVO MOUNT/BALL BEARING MODEL 3201 3201 SERVO MODEL ELECTRICAL 1 All specifications listed apply to units w ith a total resistance within the norm al resistance range. H igher o r lower

1N3206

Abstract: JAN256 1n900 MC914 1N3064M 1N3069M 1N3207 MC001 MC001A MC914A
Contextual Info: 1 N 8 9 7 - 1N902, 1N3064M, 1N3069M, 1N 3206,1N 3207, MC914 MC914A, MC916, MC916A, MC001, MC001A, M C002 Microsemi Corp. FEA TU RES • • • • • n in n c c Microminiature package. Fast recovery. Hermetically sealed glass package. Stable surface films integrally bonded to the device crystal.

BSY56

Abstract: BSY55 irf 3205 a IRF 3207 l205 ic data G3206 G-3206
Contextual Info: SILICON PLANAR NPN BSY55 BSY 56 P R E LIM IN A R Y D A TA G ENERAL PURPOSE AM PLIFIER S The BSY 55 and BSY 56 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case, inte nd e d fo r use in high p e rfo rm a n ce a m p lifie r, o s c illa to r and sw itch in g c ircu its.

DM74AS805B

Contextual Info: DM 54AS805B/ D M 74AS805B NATIONAL SEMICOND { L O G I C ? bl b S D 1 1 2 E □□SlflGl 1 6501122 NATIONAL SEMICONDUCTOR -61C 51801 D National Semiconductor DM54AS805B/DM74AS805B Hex 2-Input NOR Drivers General Description Absolute Maxim um Ratings Note 1

2N4406

Abstract: transistor c 3206 2N4407
Contextual Info: M O T O R O L A SC XSTRS/R F 12E D I b3b75S4 GQflbMl? fl | T- 31-/7 2N4406 2N4407 M A X I M U M R A T IN G S Symbol Value Unît Collector-Emitter Voltage VcEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc 'Collector Current — Continuous*

hsch 3486 zero bias schottky diode

Abstract: HSCH-3486
Contextual Info: H E W L E T T - P A C K A R D / CPIPNTS H 4 4 7 5 ß l4 G ü G T b O ß Whal mL'rtm HEWLETT P ackard blE » 774 * H P A Zero Bias Schottky Diodes for Mixers and Detectors Technical Data HSCH-3206/07 HSCH-3486 Features • High Voltage Sensitivity • No Bias Required

Contextual Info: ~ Semiconductor, Inc. TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ TheTC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and Inverters, and similar circuits where

UCC3813-4

Abstract: UCCx813
Contextual Info: UCC2813-0/-1/-2/-3/-4/-5 UCC3813-0/-1 /-2/-3/-4Z-5 U N IT R O D E Low Power Economy BiCMOS Current Mode PWM FEATURES DESCRIPTION • The UCC3813-0/-1/-2/-3/-4/-5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line