IC 2576 5.0V Search Results

IC 2576 5.0v

Abstract: 52kH lm4576 ic 3172
Contextual Info: Features D e v ic e In p u t P r e fe r r e d M a x im u m C o n tr o l M a x im u m Front Shut­ V o lta g e T o p o lo g y In p u t M ode F re q u e n c y Edge down Blanking or Sync R ange M IC 2172 a djustable 3V to 40V C u rre n t Boost 1.25A C urrent

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO -40 Vdc Collector-Emitter Voltage VCES -40 Vdc Collector-Base Voltage VCBO ^0 Vdc Emitter-Base Voltage

servo LM2575

Abstract: lm2577 with external transistor 2n2222 national semiconductor LM337 sot23-5 lm2574 constant current LM2574 SCHEMATIC DIAGRAM lm2575 adj led LM341 sot23-5 marking ha transformer LM2576
Contextual Info: tß Semiconductor LM3411 Precision Secondary Regulator/Driver General Description The LM 3411 is a low pow er fixed-voltage 3.3V or 5.0V pre­ cision shunt regulator designed specifically for driving an optoisola to r to provide feedback isolation in a sw itching regula­

IC 2576 5.0v

Abstract: G5ELM2576 PE92108 MBR360
Contextual Info: ISSUED DATE :2005/04/15 REVISED DATE : G5ELM 2576 Simple Switcher 3A Step-Down Voltage Regulator Description The G5ELM2576 series of regulators are monolithic integrated circuits that provide all active functions for a step-down buck switching regulator, capable of driving 3A load with excellent line and load regulation. These devices are available in fixed output voltage of 3.3v, 5v,

Contextual Info: •AMI FS6012-02 AMERICAN MICROSYSTEMS, INC. l2C Digital Video/Audio Clock Generator IC July 1998 1.0 Features 2.0 Description • Triple phase-locked loop PLL device provides exact ratiometric derivation of Audio, Processor, and Utility Clocks The FS6012-02 is a monolithic CMOS clock generator IC

SiGe 2577

Abstract: RF5117 laptop mini pci slot pin details 54MBPS RF5117PCBA-41X 41dBm
Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

capacitor 22 pF

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

laptop mini pci slot pin details

Abstract: SiGe 2577 transistor BC 245 54MBPS RF5117C
Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

b137 transistor

Abstract: RF5117 54MBPS 2483MHz
Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Sending ups-600

Abstract: FS6012-02 parallel port db25
Contextual Info:   6    X  T ,& 'LJLWDO 9LGHR$XGLR &ORFN *HQHUDWRU ,& August 1998 1.0 • • • Features 2.0 Triple phase-locked loop PLL) device provides exact ratiometric derivation of Audio, Processor, and Utility Clocks 2 I C-bus interface for Audio and Utility Clock

GAL Gate Array Logic

Abstract: GAL20V6
Contextual Info: GAL20V8 3 National Semiconductor GAL20V8 Generic Array Logic General Description The NSC E^CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

GAL20Vb

Abstract: GAL20V8-25L GAL20V8 gal20v8-25 GAL programming algorithm 14H6 GAL20VB-25Q pal 16P6 25L90 gal20v8 application
Contextual Info: GAL20V8 CTJ National Semiconductor GAL20V8 Generic Array Logic General Description The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

SED15705

Abstract: IC cs 4852 amplifier
Contextual Info: 10. S1D15705 Series Rev. 3.1a Contents 1. DESCRIPTION .10-1 2. FEATURES . 10-1

S1D15705

Abstract: 6232 RAM IC cs 4852 amplifier 4564 RAM S1D15707 S1D15705D00B sensor 3414 1FW 75 CMOS 4049 internal circuit DATA SHEET IC 4011
Contextual Info: S1D15705 Series Technical Manual Rev.3.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1D15705

Abstract: S1D15707 cog S1D15 IC cs 4852 amplifier
Contextual Info: S1D15705 Series Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind aristing out of any inaccuracies contained

S1D15B10

Contextual Info: MF1363-03 S1D15B10 Series Rev.1.0 No part of this material may be reproduced or duplicated in any from or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notics. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material

S1D15B10

Abstract: 3570 1301 243 D15BAD1B R1167 d15b1
Contextual Info: S1D15B10 Series Rev.1.1 S1D15B10 Series P1 S1D15B10 D15B10 SERIES OVERVIEW The S1D15B10 series is a single-chip liquid crystal display =LCD driver for dot-matrix LCDs that can be connected directly to a microprocessor (=MPU) bus. It accepts 8-bit parallel or serial

gal20v8qs

Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Contextual Info: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output