IC 151 811 Search Results

Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D • MMM75AM 0DlDD7fl 3flS ■ H P A M S A -0 43 5, -04 36 M O D A M P C a sc ad ab le S ilic o n B ip olar M o n o lith ic M icro w av e Integrated C irc u it A m p lifie rs HEW LETT PACKARD Features 35 micro-X Package1 •

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: H E W L E T T - P A C K A R D / C M PN TS blE » m • M M M 7 Sa M 0 D 1 D D 7 1 TED I IH P A MSA-0400 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD Chip Outline1 Features • Cascadable 50 Q Gain Block

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

nec 2401 831

Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: blE J> m HEWLETT-PACKARD/ CMPNTS Wfiol H E W L E T T M4t47Sfl4 ODIDOflD T33 I IHPA MSA-0470 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 1"EM P A C K A R D 70 mil Package Features • • • • • • .040 Cascadable 50 n Gain Block

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

PT 8519

Abstract: PT 4207 2SC4227 marking R34
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

information applikation

Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
Contextual Info: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

SMD CAPACITOR L29

Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The ¿¡PA802T has b u ilt-in 2 lo w -v o lta g e tra n s is to rs w h ic h are d e sig n e d PACKAGE DRAWINGS

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

philips 22 ah 590

Abstract: 521-9501-002 521-9200 521-9177
Contextual Info: 98D 03165 2812672 D I ALIGH T CÖ RP DIALI GHT m T | 2 f ll2 t i? E D ~ r~ 0 D 0 3 1 tjS A North American Philips Company T-1 3 / 4 LED L a m p s • Red, Green and Yellow LE D s in Popular T-1% Package Size. • Solid State Reliability and Cost Savings. • Introducing Super efficient LED s, Producing Full Light Output at Only 2 mA.

82s131 signetics

Abstract: prom 82S131 N82S130 82S130 82S131 512X4
Contextual Info: BIPOLAR M E M O R Y DIVISION M AY 1982 2048-BIT BIPOLAR PROM 5 12x 4 82S130 (O.C.)/82S131 (T.S.) DESC RIPTIO N FEATURES T h e 82S 130 a n d 82S131 a re fie ld p r o g r a m ­ m ab le , w h ic h m e a n s th a t c u s to m p a tte rn s • Address access time:

Contextual Info: 3 Stanford Microdevices SLN-387 Product Description Stanford M icrodevices’ SLN-387 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT M MIC is fabricated using m olecular beam epitaxial growth

at30b

Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
Contextual Info: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz

F4T5

Abstract: selectronic MAD45 csta 020 26
Contextual Info: M l WHS electronic June 1992 90C600 HI-REL DATA SHEET The 90C600 chip-set is a 32-bit custom CMOS implementation of the SPARCT architecture. The 90C600 CPU includes the 90C601 Integer Unit IU , the 90C602 Floating-Point Unit (FPU), the 90C604 Cache controller and MMU (CMU),

521-9510-002

Abstract: 1040M 811J1 521-9509-001
Contextual Info: DIALIGHT CORP “Jfl D e T| E f l l E b T E ODOBlb? 2 f 7 ^ Y / - 2./ DIALIGHT A North American Philips Gompany T - 1, T-3/4, R e c t a n g u l a r & Sp ecial S h a p e d LE D L a m p s • Red, Green and Yellow LED s in T-1 Size as well as Unique Shapes for Custom Applications.

WJ-L1

Contextual Info: WJ-L1/SML1 5 TO 3000 MHz TO-8 THIN-FILM LIMITER MODULE ♦ AVAILABLE IN SURFACE MOUNT ♦ VOLTAGE VARIABLE LIMITING LEVEL: -10 TO O dBm ♦ LOW INSERTION LOSS AT LOW INPUT LEVELS: < 2.0 dB TYP. ♦ GOOD SUPPRESSION OF EVEN ORDER HARMONICS DUE TO BALANCED CIRCUIT DESIGN