IAPX Search Results

te disa 1202

Abstract: l286
Contextual Info: Final 80L286 Low-Power High-Performance Microprocessor with Memory Management and Protection Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance processor up to 13.3 times IAPX 86 when using the 16 MHz 80L286 Surface-m ountable PLCC for high density

Contextual Info: i n t e T 8276H SMALL SYSTEM CRT CONTROLLER Programmable Screen and Character Format Dual Row Buffers Single + 5V Supply 6 Independent Visual Field Attributes 40-Pin Package Cursor Control 4 Types 3 MHz Clock with 8276-2 MCS-51 , MCS-85®, iAPX 86, and iAPX

Intel 82284

Contextual Info: A P f A M ! O M F©^O M TD©M 82284 CLOCK GENERATOR AND READY INTERFACE FOR iAPX 286 PROCESSORS 82284, 82284- 6 Generates System Clock for iAPX 286 Processors • 18-pin Package ■ Single + 5 V Power Supply Uses Crystal or TTL Signal for Frequency Source

8294 intel

Abstract: intel 8294A 8257 DMA controller intel MCS4 kpe 353
Contextual Info: in te i 8294A DATA ENCRYPTION/DECRYPTION UNIT • Certified by National Bureau of ■ Single 5V ± 10% Power Supply Standards ■ 400 Byte/Sec Data Conversion Rate a Fully Compatible with iAPX-86, 88, MCS-8 5 TM, MCS-80 , MCS-5 1 TM, and ■ 64-Bit Data Encryption Using 56-Bit Key

difference between intel 8086 and intel 80186 pro

Abstract: 82C08 intel 82c08 difference between intel 80186 and intel 80286 pro 82C08-8 80188 programming 82C08-10 intel 80186 pin out IC 8208 intel 8208
Contextual Info: in te i. 82C08 CHMOS DYNAMIC RAM CONTROLLER • ■ 0 Walt State with INTEL ^Processors iAPX 286 1 10, 8 MHz J iAPX 186/88 1 86/88 J 82C08-20 20 MHz 82C08-16 16 MHz 82C08-10 10 MHz 82C08-8 8 MHz ■ Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations)

intel 8289

Abstract: pin diagram priority decoder 74138 8289 bus arbiter 8288 bus controller definition pin out diagram of 74138 ic 8288 bus controller intel 8289 basic operating mode ic 74138 intel 8288 bus generator bus controller 8288
Contextual Info: intef IPBIILDIMOKIAraY Q O O Q BUS ARBITER • Provides Multi-Master System Bus Protocol Four Operating Modes for Flexible System Configuration ■ Synchronizes IAPX 86, 88 Processors with Multi-Master Bus Compatible with Intel Bus Standard MULTIBUS ■ Provides Simple Interface with 8288

bc160

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 0027510 70b IAPX BC160 BC161 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes for general purpose applications. N-P-N complements are BC140 and BC141. QUICK REFERENCE DATA BC160 BC161

Contextual Info: bbS3R31 D02b4SA ADS LRE D N AMER PHILIPS/DISCRETE IAPX B Y 228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television

Contextual Info: b'lE D N AUER P H I L IPS/DISCRETE bbS3R31 0027101 Philips Semiconductors 07T B IAPX Preliminary specification High speed diode FEATURES 1PS193 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D bbS3T31 □ D2'132b m b I IAPX BLW34 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • b b S S ^ l DD2b43fl T17 IAPX BB911 l VHF VARIABLE CAPACITANCE DIODE The BB911 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band A up to 160 MHz in all-band tuners.

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.

Contextual Info: N AUER PHILIPS/DISCRETE blE I> bb53^31 DDSbbT1! ITT IAPX BYX90G E.H.T. AVALANCHE FAST SOFT-RECOVERY DIODE E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-component for very high voltage stacks, fo r example, in X-ray equipment with fre­

Contextual Info: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

Contextual Info: N AUER PHILIPS/DISCRETE bSE D bbsa^ai □ D27bBL bSb IAPX D r BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended fo r class-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53T31 DDSfllflS T7S I IAPX 2K U y4t> A SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal transistor, in a plasticTO-92 envelope. It is intended for use in audio amplifier driver stages and low speed switching applications etc.

Contextual Info: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: N AMER PHILIPS/DISCRETE b'JE T> bbsa^ai 003245D fiS3 IAPX U M d /u HYBRID INTEGRATED CIRCUIT VHF/UHF W IDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV and CATV systems, and as

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bb53T31 QDBflOB? 3^B PH2222 PH2222A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 envelopes, primarily intended for switching and linear applications. QUICK REFERENCE DATA PH2222 PH2222A v CBO

Contextual Info: • Philips Semiconductors ^ 5 3 ^ 3 1 0024101 IAPX Product specification N AMER PHILIPS/DISCRETE b7E D N-channel field-effect transistor 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections