I881 Search Results

T125 5E4

Abstract: 21SX1-T T125 VDM0150
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER P LA S T IC 21SX1-T REV DOCUMENT 9 0038449 PLUNGER. C H A N G E D BY VS 28APR08 CHECK BLR PRODUCT CODE VDM0150 B B NOTES / f \ MOUNTING HOLES WILL ACCEPT PINS OR SCREWS OIA. ON .I881-002 CENTERS 2 - TERM INALS ARE P LA T E D FOR SOLDERING

Contextual Info: moi _ I8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

Contextual Info: ^EDI E D I88128V-RP • ELECTRONIC DESIGNS, INC 128Kx8 Ruggedized Plastic Static Ram 128Kx8 Static RAM CMOS, Monolithic Features 128Kx8 bit CMOS Static EDI's ruggedized plastic 128Kx8 SRAM allow s the user to Random Access Memory capitalize on the cost advantage o f using a plastic com po­

Contextual Info: G E SOLID STATE 01 DEj 3A750A1 DDlbMAE 0 |~~ D _CMOS Peripherals T -7 5 -3 7 -0 5 Advance Information TERMINAL ASSIGNMENT Vss — cso— csi — RES — R ,C — XTLT— XTLO— RTS — ET — T -OTR-RXD — RSO — RSI — I

80C85A

Abstract: 82C59A M5M82C59A
Contextual Info: OKI sem iconductor MSM82C59A-2RS/GS/JS PROGRAMMABLE INTERRUPT CONTROLER GENERAL DESCRIPTION The MSM82C59A-2 is a programmable interrupt controller for use in MSM80C85A/A-2 and MSM80C86/88 microcomputer systems. Based on CMOS silicon gate technology, this device features an extremely low standby current o f 100 nA

J905

Abstract: AC 3002 BA 3432 S
Contextual Info: f 8803/8813 Series Right angle type 8803-XXX-170L Receptacle •Dimensions P in A U N IT ! m m inch B C D 20 2 5 .4 3 2 0 .3 2 (1.001) (0.800) 1 5 .4 3 (0.607) 1 1 .4 3 (0.450) 26 2 9 .2 4 2 4 .1 3 (1.151) (0.950) 1 9 .2 4 (0.757) 1 5 .2 4 (0.600) 30 3 1 .7 8 2 6 .6 7 21 .7 8

CI 4953

Abstract: 8813S 100PINS
Contextual Info: r 8803/8813 Series Straight type 8803-XXX-170S Receptacle I8803-XXX-170SX I Dimensions X-X’ Cross Section A C D 20 2 5 .4 3 20 .3 2 1.001 (0.800) 15.43 (0.607) 1 1.43 (0.450) 26 2 9 .2 4 2 4 .1 3 (1.151) (0.950) 19.24 (0.757) 15.24 (0.600) 30 31 .78 2 6 .6 7 21 .78

EDI88130CS20NB

Abstract: EDI88130CS EDI88130CS15CI EDI88130CS55LB EDI88130CS25CB EDI88130CS25N
Contextual Info: W5X I88130CS 128Kx8 M onolithic ELECTRONIC DESIGNS, INC Static Ram Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory • The I88130CS is a high speed, high performance, Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.

EDI88128V15MI

Abstract: EDI88128V15MM EDI88128V20MM EDI88128V25MM
Contextual Info: I88128V-RP ^EDI • ELECTRONIC DESIGNS. INC 128KxSRuggedized Plastic Static Ram 128Kx8 Static RAM CMOS, Monolithic Features 128Kx8 bit CMOS Static EDI's ruggedized plastic 128Kx8 SRAM allow s the use rto Random Access Memory capitalize on the cost advantage of using a plastic com po­

EDI88128C

Contextual Info: I88128C W D\ 128Kx8 Monolithic ELECTRONIC DESIGNS, INC. Static Ram 128Kx8 Monolithic CMOS Static RAM, High Speed Features The I88128C is a high speed, high performance, mono­ 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.

Contextual Info: ////A 8 8 0 0 S eries Single-side Straight type f ill_ _ 8 8 00 S /88 0 1 S /8 8 0 2S Series (Receptacle) mm(inch) I8800S/8801S-XXX-170SX •Dimensions m z 'TH E 1 A F Pin 40 50 A 63.53 (2.501) 58.42 (2.300) 53.53 (2.107) 51.93 (2.044) 76.23 (3.001) 71.12

Contextual Info: I_ I 78968 - ¿ 2 2 - min 12.? DIM, 'E- l4 -|-8 B 6 /t.l5 ) ® |A (j)| -gset.aas .062 (1.571 •OBî.aai (ie.i6ie.eai i .125*.B®2 DIM. 'F' |-fr|.884A .I8) ® |A ® | - (6.35*131 r , .862 *.882 .e 5 8 i.g e i TYf a27*8.«3) NON-ACCUM .oaet.eas

EDI88130C100PI

Contextual Info: m I88130C-RP a • ElfCTHONC CC9GN& NC 128Kx8 Ruggedized Plastic SRAM 128Kx8 Static RAM CMOS, Monolithic F e a tu r e s The I88130C is a ruggedized plastic, monolithic Static 128Kx8 bits Monolithic CMOS Static RAM organized as 128Kx8 bits. Random Access Memory

EDI88128CS45CB

Abstract: EDI88128CS55CB EDI88128LPS45NB EDI88128LPS55TB EDI88128LPS EDI88128CS20CC
Contextual Info: ^EDI _ I88128CS ELECTRONIC DEIG N S INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 20*, 25,35,45, and 55ns • E and G Functions for Bus Control

Contextual Info: I88128CS Hi-REUÄBiUTY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES The I88128CS is a high speed, high perform ance, 128Kx8 m egabit density M onolithic CM O S S tatic RAM. • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns ■ CS and OE Functions for Bus Control

NSP-501

Abstract: 188-114A
Contextual Info: Sipeÿc SP501 s k ì & a l p r o c e s s i n g e x c s li e n c e f Iex iPort Multi-Protocol Line Driver/Receiver FEATURES DESCRIPTION • Supports Industry Standard Software-Selectable Protocols'. • RS232 V.28 • R S42 2 A ( V . l l . X . 2 7 ) • R S42 3 A (V .IO , X.26)

YP35

Abstract: 1881C
Contextual Info: EL1881C P f tf lT f lP f E L I 88 IC HIGH PER«mt lÄ«CE AMALOS IMSflAtEE CIRCUITS SytlC SepüJTütOr, LOW POWCF Features General Description • NTSC, PAL, SECAM, non-standard video sync separation • Fixed 70mV slicing of video input levels from 0.5Vp.p to 2VP.P

Contextual Info: ////A 8 8 0 3 /8 8 1 3 S eries Right angle type 8803-XXX-170L Receptacle •Dimensions I8803-XX X-170LX Pin UNIT! mm inch A 25.43 (1.001) 29.24 26 (1.151) 30 31.78 (1.251) 32 33.05 (1.301) 34 34.32 (1.351) 40 38.13 (1.501) 50 44.48 (1.751) 52 45.75 (1.801)

ED188128

Abstract: ED188128lp
Contextual Info: ^EDI I88128C/LP/P Bactronic 0 *s^n s Irtc.i Megabit Monolithic SRAM 128KX8 Static RAM CMOS, Monolithic !P [Rli lf l i QM O T Features The I88128C/LP/P* is a high performance, mega­ bit density monolithic Static RAM organized as 128Kx8 bits, designed for use in systems where fast computa­

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

Contextual Info: •lì EDI88512CA H i-R £LiA S IÜ T Y PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The E D I88512C A is a 4 m e g a b it M o n o lith ic C M O S S ta tic R A M . ■ A cce ss T im e s o f 1 5 ,1 7 , 20, 25, 35, 45, 55ns ■ D ata R e te n tio n F u n ctio n LPA ve rsio n

C 8187

Abstract: IN 5406 DC 8806 8807 I8806-XXX-170L 94 4311 101233
Contextual Info: f 8800 Series RIGHT ANGLE 8806/ 8807 Series Receptacle I8806-XXX-170L mm inch iDimensions P in A B C 140 79.47 92. 17 (3.129) (3.629) 90. 17 77.47 (3.050) (3.550) D E 160 180 200 104.87 117.57 130.27 (4.129) (4.629) (5.129) 102.87 115.57 128.27 (4.050) (4.550) (5.050)

8806

Abstract: 8816 C 8187
Contextual Info: f 8800 Series STRAIGHT _ 8806/8807 Series Receptacle_ •8806-XXX-170S P in I8807-XXX-170S 5 120 140 160 180 200 A 99.20 111.90 124.60 137.30 150.00 3.906 (4.406) (4.906) (5.406) (5.906) B 84.10 96.80 109.50

Contextual Info: ^ ^ ^ ^ r 8 8 0 0 S e rie s Single-side Right angle type 8 8 00 S /8 8 0 1 S /8 8 0 2 S Series (Receptacle) 18800S/8801S-XXX-17 OLX mm(inch) •Dimensions i t f li i — i— m 1=3_ 1_□ m J23 Pin »nnn BU I 40 50 A 63.53 76.23 (2.501) (3.001)