I740A Search Results

Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K

EZ-34

Abstract: IRFM120A U2N60
Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A

I740A

Abstract: PMK 300
Contextual Info: IRFW/I740A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 i-iA Max. @ Vos = 400V ^D S (o n ) “

IRF MOSFET 100A 200v

Abstract: MOSFET 150 N IRF
Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

I740A

Contextual Info: IRFW/I740A A dvanced Power MOSEET FEATURES BVDSS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 ■ Improved Gate Charge = 0.55 Q. o Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW/I740A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: IR F W /I7 4 0 A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area

Contextual Info: IRFW/T740A Advanced Power MOSFET FEATURES BVdss = 400 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jaA M ax. @ VDS= 400V