I640 Search Results

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I640A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.18Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 18 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I640A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.18Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 18 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: IRFW/I640A Advanced Power MOSFET FEATURES BV DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on - 0.1 8 £2 In = 1 8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

EZ-34

Abstract: IRFM120A U2N60
Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A

Contextual Info: ERFW/I640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV dss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ VM = 200V

AMJS0808X04KXXX-H

Contextual Info: _a_ File No. I640 I SHEET 0" 1/1 SPECIFICATION Insulation Resistance: 1000 Megaohms Min. Withstand Voltage: 1000V AC/Minute Durability:600 Mating Cycles Min. RoHS Compliant 57.8±0.25 13±0.2 o o o o o o o o o o o o o o o o o o o o o .1 o o o 1.27±0.1 2.54±0.1

Contextual Info: _a_ File No. I640 I SHEET T 1/ 2 SPECIFICATION Connector Material: Housing: PBT Black C ontact/S hield: Cooper Alloy Shield Plating: Nickel C ontact Plating: Selective Gold Plated In Contact Area Pin Not Electrically Connected Maybe Omitted See Electrical Drawing For Omitted Pins

Contextual Info: 1 _a_ I File No. I640 zn: SHEET _LZi_ SPECIFICATION Housing: Thermoplastic UL94V—0 C ontact/S hield: Cooper Alloy Shield Plating:Nickel Contact Plating:Selective Gold Plated In Contact Area Pin Not Electrically Connected Maybe Omitted See Electrical Drawing For Omitted Pins

Contextual Info: IRFW/I640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVDSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDE= 200V

A1191

Abstract: D0808 MJ 14 x 1,5 - 4
Contextual Info: _a_ File No. I640 zn: SHEET ILL SPECIFICATION Insulation Resistance: 1000 M egaohm s Min. Withstand Voltage: 10 0 0 V AC/Minute Durability:750 Mating Circles Min. Contact:Phosphor Bronze,0O.46 Dia. Housing:PBT,Black RoH S Compliant Recom ended P.C.B. Layout

SA-210-0

Contextual Info: 13 12 MATERIAL NO I9 I6402 I0 I9 I6402 11 I9 I6402 I2 11 10 ALTE RNATE NO SA-210-0 6 SA-210-0 8 SA-2 IO- IO 9 8 7 TE RMINAL A- 110-06 A- 110-08 A- I IO- IO "S" REF . I46 . I73 . I98 MAX HOUSING TERMINAL C U S T O M E R DRAWING TERMINAL MATERIAL^ COPPER PLATING: TIN

SAA 1025

Abstract: UL-310
Contextual Info: 10 MATERIAL ENG. NUMBPR NUMBER 19 16400 15 SAA-9260 19 1640048 SBB-9262 19 I6400T5 SC-9280 TAPP TAPP PNG MATPRIAL NUMBPR NUMBPR 9 16400 16 SAA-9260T 19 1640049 SBB-9262T NYA NYA WIRE SIZP AWG 22- 18 16- 14 12- 10 191164- B D g WIRP SIZP NYLON MAX. MWID

I80n

Contextual Info: I 10 ? I MATERIAL ENGINEERING MATERIAL NUMBER NUMBER NUMBER ON TAPE 8 ENGINEERING NUMBER ON TAPE I9 I 6 4 0 0 5 2 S B R A -8I56N N /A N /A I9 I 6 4 0 0 5 3 SBRA -8 I80N N /A N /A I9 I 6 4 0 0 5 4 SBRB -8 I5GN I9 I6404 I4 SBRB -8 I56NT I9 I 6 4 0 0 5 5 S BR B -8I80N

Contextual Info: I640 - Series 3.2 mm x 5.0 mm Ceramic Package SMD VCXO, LVCMOS / LVPECL / LVDS Product Features Applications Small Surface Mount Package Fast Sample Delivery Frequencies to 1500 MHz Pb Free/ RoHS Compliant Leadfree Processing xDSL Broadcast video Wireless Base Stations

717 MOSFET

Abstract: bvn mosfet MOSFET SBT
Contextual Info: IRLW/I640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ B V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175» «Operating Temperature Lower Leakage Current : 10 HA Max. @

Contextual Info: IRLW/I640A A d v a n c e d Power MOSFET FEATURES B V dss = 200 V ^ D S o n = 0 .1 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK

Contextual Info: I640 - Series 3.2 mm x 5.0 mm Ceramic Package SMD VCXO, LVCMOS / LVPECL / LVDS Product Features Applications Small Surface Mount Package Fast Sample Delivery Frequencies to 1500 MHz Pb Free/ RoHS Compliant Leadfree Processing xDSL Broadcast video Wireless Base Stations

VCXO

Contextual Info: 3.2 mm x 5.0 mm Ceramic Package SMD VCXO, LVCMOS / LVPECL / LVDS I640 - Series Product Features Applications Small Surface Mount Package Fast Sample Delivery Frequencies to 1500 MHz Pb Free/ RoHS Compliant Leadfree Processing xDSL Broadcast video Wireless Base Stations

Contextual Info: IRLW/I640A A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K

1588A

Contextual Info: 1 I I _a_ 6 File No. I640 zn: SHEET ILL SPECIFICATION Insulation Resistance: 1000 M egaohm s Min. Withstand Voltage: 1000V AC/Minute Durability:600 Mating Circles Min. RoHS Compliant A M JD 0 6 0 4 K E X X -H 1 (1 )XX:Contact Finish 01:Gold Flash 03:Gold Plated 3 u ”

mosfet j 114

Contextual Info: IRFW /I640A Advanced Power M O SFET FEATURES BV dss = 200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n - ■ Lo w e r Input C a pa citance lD = 18 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

ld18a

Abstract: LD-18A
Contextual Info: IRLW/I640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Avalanche Rugged Technology 0.18f2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature

nt diode

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I640A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.18Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 18 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

ld18a

Abstract: LD-18A
Contextual Info: IRFW/I640A Advanced Power MOSFET FEATURES BVDSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 18 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V