I404 Search Results

I404

Abstract: I-404
Contextual Info: OCXO I404 Series STANDARD SPECIFICATIONS Frequency Cut Output Level Duty Cycles Rise/Fall Time Stability Temperature Supply Voltage ±5% Load Aging Warm up 2.500 to 20.000 MHz AT , SC TTL/HCMOS Compatible ‘0’= 0.4 Vdc Max., ‘1’=2.4 Vdc Min. ‘0’=0.1 Vcc Max., ‘1’=0.9 Vcc Min.

4046a

Abstract: 4046-A
Contextual Info: 5A/I28B R.F. Pentode i4046* 4046A CATHODE. Indirectly-heated oxide-coated. Voltage Nominal current 4 I V A R A T IN G . i j /M easured at Va 200V \ Mutual conductance *{ Vg, 100V Vgt 2V/ , * . . mA/V 0.007 10.7 8 pF pF pF 137 39 mm. mm. 60 g. 250 100 9

IXDI404PI

Abstract: IXDN404PI IXDI404SI-16 IXDN404 IXDF404PI cl470 IXDF404
Contextual Info: IXDN404PI / N404SI / N404SI-16 IXDF404PI / F404SI / F404SI-16 I404PI / I404SI / I404SI-16 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

Contextual Info: 13 12 10 CKT S IZ E SEE NOTE 9 4 5 DIM B 6 DIM A- DIM NO. EARS 18.00 ( 16.80) (22 .20 ) „827 1.039 (2 6 .4 0 ) IO II r . I57±„008 (4.00± .20) C DIM D .921 (23.40) .8 9 0 (22 .60 ) (27 .6 0 ) 1.087 1.055 (26 .80 ) 1.252 (3 1.80) 1.205 1.220 1.417 (3 0 .6 0 )

4049D

Abstract: Scans-0017390 I4049
Contextual Info: 2V/500C Half Wave Mercury Vapour Rectifier 4049d> 4049D CATH O D E. Oxide-coated shielded filament Voltage N om inal current 4 II V A D IM E N S IO N S . Maxim um overall length Maxim um bulb diameter Base N e t weight 270 mm. 63 mm. Giant Edison Screw 220

DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

TRANSISTOR BC 545 smd

Abstract: IRFN350 irfn44 IRFMG50 IRFN044 IRFN9040
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER llORI REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part Num ber BV q s s Rectifier’s advanced line of power M O S F E T transistors.

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

Contextual Info: « 2ÌL C E P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86L29 6 K In f r a r e d R e m o t e C o n t r o l l e r FEATURES Part ROM KB RAM (Bytes)* Speed (MHz) Voltage Range Z86L29 6 125 8 2.0V to 3.6V Note: ’ General-Purpose • All Digital Inputs are CMOS Level

5559B

Abstract: 5559 p4052
Contextual Info: 13 12 10 CKT SIZE 4 DIM A „496 I2„60 „66 I ( I6„80) „827 (2 LOO) „992 (25„20) l„ I57 (29„40) L323 (33„60) 1.488 (37„80) 1.654 (42„00) L8I9 (46„20) 5 8 7 8 9 I0 FACTORY IDSEE NOTE 11 I2 I-lì I (I I POSITIVE LOCK

Contextual Info: DIMENSIONS ZF3:CI I0.0231S5290ITST.DGN sMM IN METRIC DO NOT SCALE DRAWING 2.5 MIN. A ±17 I RECOMMENDED P C B P A T T E R N SC A LE :2 - I) DRAWING ÍS L NO 36.02 SCALE a ) N O TES 29.67 1. t t H 25.86 23.32 2 0 .15 26.5 NOT MATERIAL LCP, 9 - 5 ^ U :S B & *

sd 4093

Abstract: i4093
Contextual Info: 13 12 10 CKT S IZ E D IM 4 A DIM I2„60 < 18=00) ( 18.40) (2 3 „40 ) „874 „890 1.087 (22„20) (2 2 „60) (2 7 „60) „827 1.039 (2 LOO) (2 6„40) „992 1.370 1.386 1.583 (34.8 0 ) (3 5 „20 ) (4 0 „20) NO TE 1.748 (44„40) 1.7 17 1.70 1

ML408

Abstract: 40821 4D560 SMI-4D-560 SMJ-50-560 SMI-40-1R5 SMI-40-2R2 SMI-40-3R3 SMI-40-4R7 SMI-40-6R8
Contextual Info: SMD INDUCTORS MODEL NO. FEATURES: : SMI-40 / SMI-50 SERIES * SUPERIOR QUALITY FROM AN AUTOMATED PRODUCTION LINE. * PICK AND PLACE COMPATIBLE. * TAPE AND REEL PACKING. APPLICATION : * NOTEBOOK COMPUTERS. * DC-DC CONVERTORS. •DC-AC INVERTERS. * SIGNAL CONDITIONING

sd 4093

Abstract: 94v0 5559 MOLEX MOLEX 5559 series apcb+m3+94v-0 POWER+SUPPLY+BOARD+sy+94V-0
Contextual Info: 13 12 10 CKT S IZ E S E E NO TE 9 DIM 4 5 6 DIM 18.00 ( 16.80) (22„20) EARS (27 .6 0 ) 1.087 1.055 1.252 (3 1.80) „992 1.205 1.220 1.417 (25„20) (3 0 .6 0 ) (3 1.00) (3 6 .0 0 ) l„ 157 1.370 1.386 1.583 (29„40) (34 .80 ) (35 .20 ) (4 0 .2 0 )

BA1404 application note

Abstract: BA1404 BA1404 equivalent pcb for ba1404 BA1404F KF-38E 8A1404 ba1404 fm transmitter 1S10 MA321
Contextual Info: noHm Storvo Dansmitlm BA1404 BA1404F Dimensions Unit: mm BA1404 IS 17 16 15 14 13 1? II 10 O 1 2 ) 4 5 6 7 ( 9 7 .* ± 0 .3 " i - r - S r èrr u> d +1 The BA1404 and BA1404F are monolithic FM stereo transmitters. The devices contain a stereo modulator, an

5320-50AT2

Abstract: mx 2262 5320-30AGS37F 34-AG 40-AG 5328-N MXJ-7 UI6008
Contextual Info: 10 sas NOTES 1. » » 2. 3. 4. 5. I\O V '-J O I5X A U PBTP UL94V-0 , H • 5-5^-JU : MATERIAL HOUSING : PBTP ( I5XG.FJ, UL94V-0, BLACK TERMINAL : PHOS.BRO. J S S W * : 1.27 . . 2> 1.14 MAX. cKUfi : AWG*26~*28 SMB : AWG*28 FOR USE WITH AWG*26 & *28 STRANDED WIRE

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

BA3312N

Abstract: BA1404 ba1404 fm transmitter BA1404 application note BA3312 BAI404 BA1404F ba3312n applications 450 khz IF Filter IC BA1404
Contextual Info: BA1404 BA1404F FM stereo transmitter The BA1404 and BA1404F monolithic ICs are stereo transmitters Dimensions Units : mm BA1404(DIP18) Each IC consists of a stereo modulator that creates stereo composite signals, an FM modulator that creates FM signals,

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

ade 633

Abstract: MV1401 MV1402 MV1403 MV1406 MV1407
Contextual Info: \Æ MORE HYPERABRUPT TUNING DIODES electronics The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tu ning applications. Their large values of nom inal capacitance are for A M applications w ith the low er capacitance