I374 Search Results

M37475M4-XXXSP

Abstract: M37476M4-XXXFP MELPS-740 MELPS 740
Contextual Info: baMTflSfl 001715b 750 • M I T H M IT S U B S S H f M IC R O C O M P U T E R S M37475IVS2-XXXSP,&i37475IVI4-XXXSP M 3 7 4 7 5 IV 1 8 -X X X S P ,M 3 7 4 7 6 IV 1 2 -X X X S P /F P I V I3 7 4 7 6 M 4 - X X X S P / F P , M 3 7 4 7 6 iy i8 - X X X S P / F P

2N7236

Abstract: 2N7236 JANTXV 2N7236 JANTX KIV* diode CCII APPLICATION me 555 IRFM9140 D 1380 Transistor
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER | I R | REPETITIVE AVALANCHE RATED AND dv/dt RATED •RFM914Q SN7S36 JAIMSSN7S36 JANTXSN7S36 JAIMTXVSN7S36 TRANSISTOR Il P-CHANNEL [REF: M IL-S-19500/S9B ] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET technology is the key to International

M37450M

Abstract: M37450M8-XXXSP MELPS-740 M37450
Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 3 7 4 5 0 M 2 -X X X S P /F P ,M 3 7 4 5 0 M 4 -X X X S P /F P M 3 7 4 5 0 M 8 -X X X S P /F P S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The M 37450M 2-XX X S P/FP is a s in g le -c h ip m icro com p uter

Contextual Info: JAN 1 g M ITSUBISHI MICROCOMPUTERS M 3 7471M 2-X X X F P ,M 37471M 4-X X X F P PRELIMINARY M 37471M 8-X X X F P S ING LE-CHIP 8-B IT CMOS MICRO CO M PUTER DISCRIPTION The M 37471M 2-XXXFP is a sin g le -c h ip m icro co m p ute r d e ­ PIN CONFIGURATION TOP VIEW

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

F6668

Abstract: I-3608 TA 71308 I-3I47
Contextual Info: 13 12 11 10 O P T IO N A L P IC K AND SEE PLACP ± 0 . 15 CAP N O T E S 4 & 9. TYP. A IQ.6 7 REF. .42 0 PEG AT O PTIO N ! 3.3 D P.C. BOA RD PA D L A Y O U T ENDS FOR NO PEG V E R S I O N R E F . —i REP. 1.40 _ ’ .05 5 .055 1. PEG MATERIALS .130 INSULATOR

ic nn 5198 r

Abstract: mx 362-0 PK-70873-0041 PK-70873-0353 nn 5198 mos 6550 PK-70873-042 din 5480 PK-70873-0805
Contextual Info: 13 12 10 DIM. OPTIONAL PLACE CAP "G" 10.67 .42 0 o AND SEE DI N. N PICb "M” 6 .1 0 N O T E S 4 & 9. 8 .1 3 12.70 .32 0 .50 0 1.2 7 2 .54±C .05 0 .145 TYP. 6. IQ .240 .64±Q.13 XT XT 4.44 „0 25±„005 SEE NOTE .175 5 RECOMMENDED "G" P-C-BOARD P.O. BOA RD

2N7236 JANTX

Abstract: 2N7236 mosfet K 1377
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

PK-70873-0041

Contextual Info: 13 12 10 SEE NOTES DIM. "M" DIM. 'G' 6.10 o '• tT ON OPTIONAL AND PLACE 10.67 .420 8.13 .320 12.70 .500 TYP„ REF. FINISH: 59 TIN - 0.00150/.000059 MINIMUM BRIGHT TIN OVER NICKEL OVERALL 15Q TIN - a.00381/.0aai50 MINIMUM BRIGHT TIN OVER NICKEL OVERALL.

Infineon ITS 7166

Abstract: f0035 a1 f0035 cat c15 ecm F0041 QuadFALC errata FCC68 PUB43802 PUB62411 TR62411
Contextual Info: Y R A IN LI M E ICs for Communications R E1/T1/J1 Framer and Line Interface Component for Long and Short Haul Applications FALC -LH P PEB 2255 Version 1.3 Preliminary Data Sheet 05.99 DS 1 • PEB 2255 PRELIMINARY Revision History: Current Version: 05.99

M37450M8

Contextual Info: I £>24=1020 001b413 I 110 • N IT 4 M IT SU B ISH I MIC ROCOMPUTERS M 3 7 4 5 0 M 2 -X X X S P /F P ,M 3 7 4 50 M 4 -X X X S P /F P n iT S U B IS H K n iC M P T R /M IP R C b lE D M 3 7 4 5 0 M 8 -X X X S P /F P S IN G L E -C H IP 8 -B IT CMOS M IC R O C O M P U T E R

2N7236

Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International

marking t08i

Abstract: FR07 APC 2020 B I326 T08G A200000 ti01h BTS 7246 I342 T3.15A 250V
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

RTL8211E

Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

Contextual Info: 200 VA - 12 kVA Inverter Series UPS/INVERTERS www.powersolve.co.uk • Sinusoidal Output from 12-480 V • Compact Switched Mode Design • DC Inputs 10-400 V • Wall or Rack Mounting • Industrial Grade • Customised Design Available Specification Input

R9810

Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22

Contextual Info: P54/74PCT3374C/D 3.3 VOLT OCTAL D FLIP-FLOPS WITH 3-STATE OUTPUTS X /- FEATURES ESD protection exceeds 2000V • Function and Drive Compatible with the Fastest TTL Logic 48 mA Sink Current Com’l , 32 mA (Mil)