I304 Search Results

550-5604f

Abstract: 5204F 0504F
Contextual Info: ASSEMBLY NUMBER LED COLOR DIM. 'A ' DIM. “B* DIM. ”C" 5 5 0 - 0204F 550-0304F 5 5 0 - 0404F 5 5 0 - 0504F 550-0704F 5 5 0 - 0804F 5 5 0 - I 004F 5 5 0 - 1 I 04F 5 5 0 - I 204F 550-I304F 5 5 0 - 2204F 5 5 0 - 2304F 5 5 0 - 2404F 5 5 0 - 2504F 5 5 0 - 3004F

MFC6030

Abstract: MFC8010 mfc8040 MC1335 mc1345 MFC4060 mc1304 mfc6010 germanium TRANSISTOR C1741
Contextual Info: G E N E R A L IN F O R M A T IO N Master Index Interchangeability Guide Packaging Information Non-Encapsulated Device General Information S E L E C T O R G U ID E D A T A S H E E T S P E C IF IC A T IO N S | . . . in alpha-numerical sequence by device type number, unless otherwise

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

L5A marking

Abstract: MES1304 MES1305 MES1306
Contextual Info: niCROSEM I STE CORP D • tillSfibS 0005053 i ■ NSC MES1304 MES1305 MES1306 Microsemi Corp. santa , i.v i. STO ■V( O l I S D A I I. - 1 / : For m orein fonnation call: {714 979-8220 Ultra Fast Switching Rectifier FEATURES • MICROMINIATURE PACKAGE

Contextual Info: h a r r is H I-3 0 4 /6 8 3 Dual SPST CMOS Analog Switch Ja n u a ry 19 89 Features Description • This Circuit Is Processed in Accordance to MH-Std- The HI-304/883 sw itch is a m o nolithic device fabricated using CMOS tech nolog y and the H arris D ielectric Isola­

825m

Abstract: 251C DG304A DG304AA
Contextual Info: - DG304A SPST CM OS • X 'f - / ^ I S >r — i? a » '> ic < , i f i f t i i t ' h è v ' . x - r fts-!?, ^ - > » } » 7 t n K> i * j f 7 + v = f- i i -7 ' w ± 15 V, -t -' h T J U n ? ' • x -I- -y ? ') l * X 5E * g iy + * i 44V G N D *1 25V Vs , Vo * 1 —2V ~ ~ V + + 2V or 30m A

Contextual Info: H I-300 thru H I-307 3J HARRIS Features A p p lio a tio n s • Analog Signal Range ±15V Supplies . ±1SV • Low Leakage (Typical @ + 2 5 ° C ). 40pA • Low Leakage (Typical @ + 1 2 5 °C ).InA

HI302

Contextual Info: H I-3 0 2 /Q Q 3 h a r r is Dual DPST CMOS Analog Switch January 19 89 Features Description • This Circuit Is Processed In Accordance to M il-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HI-302/883 sw itch is a m o nolithic device fabricated

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

PK-70873-0041

Contextual Info: 13 12 10 SEE NOTES DIM. "M" DIM. 'G' 6.10 o '• tT ON OPTIONAL AND PLACE 10.67 .420 8.13 .320 12.70 .500 TYP„ REF. FINISH: 59 TIN - 0.00150/.000059 MINIMUM BRIGHT TIN OVER NICKEL OVERALL 15Q TIN - a.00381/.0aai50 MINIMUM BRIGHT TIN OVER NICKEL OVERALL.

TLP181 equivalent

Abstract: NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp
Contextual Info: 10. Cross Reference Code Definitions A : D irect R eplacem ent B : M inor Electrical Difference C : M inor M echanical Difference D : M ajo r Electrical Difference E : M ajo r M echanical D ifference F : Call T O S H IB A * G : No Equivalent The fo llo w in g Cross-Reference is m eant to

2005Z

Abstract: HI1-0300-2 HI1-0300-5 HI-300 HI-301 HI-303 HI-304 HI-305 HI-306 HI-307
Contextual Info: HI-300 thru HI-307 33 HASras CMOS Analog Switches August 1997 Features Description • Analog Signal Range ±15V Supplies . ±15V The HI-300 thru HI-307 series of switches are monolithic devices fabricated using CMOS technology and the Harris

ST70A

Abstract: ST72A ST73AN420 w1I smd J215 j115 ST-71 ST41AN115 ST70DN420 ST40D
Contextual Info: s M T ST Defence Agency Certified Toggle Switches 31 •T5 • n m Features - 'y D efen ce A g e n c y C ertified to g g le s w itc h e s passed, in ^ t t iÄ D S P Jf 1983, th e A g e n c y ’s c e rtific a tio n te s tin g as per DSP-C6310B to g g le s w itc h e s s p c ific a tio n s . FUJISOKU is

064B

Abstract: 5328-N E6460
Contextual Info: 10 ÎÈ ÎB NOTES I. I5X À lJ PBTP U L 9 4 V -0 I Y d V 'j ' J t ìt t U > MATERIAL HOUSING : G.F. \57. PBTP (UL94V-0) TERMINAL : PHOSPHOR BRONZE 0 I.I4 MAX. 1.2 7 £ " J ^ ' j 7 $ y ' T - Z ? ) l AWG# 26 ~ # 28 (S3 : AWG# 28 M h iM S 6 .0 6* FOR USE WITH AWG*26 & *28 STRANDED WIRE (CONSISTS OF 7 CONDUCTORS)

5320-50AT2

Abstract: mx 2262 5320-30AGS37F 34-AG 40-AG 5328-N MXJ-7 UI6008
Contextual Info: 10 sas NOTES 1. » » 2. 3. 4. 5. I\O V '-J O I5X A U PBTP UL94V-0 , H • 5-5^-JU : MATERIAL HOUSING : PBTP ( I5XG.FJ, UL94V-0, BLACK TERMINAL : PHOS.BRO. J S S W * : 1.27 . . 2> 1.14 MAX. cKUfi : AWG*26~*28 SMB : AWG*28 FOR USE WITH AWG*26 & *28 STRANDED WIRE

temic 0675 d4

Abstract: temic 0675 c9 TFK 404 telefunken transistor Temic IDIC chip 5551 preliminary schematic diagram pioneer amplifier sa 9800 7-segment display tfk 308 temic 0675 d1 atmel e5550 AEG PS 451
Contextual Info: General Information R em ote Control Identification Systems M icrocontrollers Addresses Temic S e m i c o n d u c t o r s General Information Alphanumeric Index T y p e . T y p e . e5530 10, 300 TK5550F-PP

lz92e19

Abstract: CIRCUIT diagram tv sharp 21 BG 12 Diode SY 345 mn60
Contextual Info: Timing Pulse G enerator LSI for 2/3" C C D LZ92E19 • LZ92E19 Timing Pulse Generator LSI for 2/3" CCD Description Pin Connections The LZ92E19 is a CMOS timing pulse generator LSI. U sed in combination with the LZ92B31 defect compensator LSI, it provides drive timing pulses,

OZ960

Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED