I2PAK Search Results

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

P11NM60AFP

Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

STB45N10L

Contextual Info: STB45N10L N-CHANNEL 100V - 0.028 Ω - 45A I2PAK/D2PAK POWER MOS TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB45N10L 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STB18N20

Abstract: isd 2100
Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP12NM50FP

Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A

4NC60

Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
Contextual Info: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω

11NM60

Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω

STB4NC60A-1

Abstract: STP4NC60A STP4NC60AFP
Contextual Info: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω

mbr10120

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: MBR30100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 30 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

MBR20100CE

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

W 20NM60

Abstract: 20nm60 STB20NM60-1 STP20NM60 STB20NM60 STP20NM60FP diode k 0368
Contextual Info: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ VDSS RDS on 600 600 600 600 < < < < V V V V 0.29 0.29 0.29 0.29 Ω

stp6nc60fp

Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

STW35N65M5

Abstract: STP35N65M5 35N65M5 STB35N65M5 STF35N65M5 STW35N65 STI35N65M5
Contextual Info: STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 Ω, 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJMAX RDS on max 710 V 710 V 710 V 710 V 710 V < 0.098 Ω < 0.098 Ω < 0.098 Ω

STD90N4F3

Abstract: STI90N4F3 STP90N4F3 STU90N4F3
Contextual Info: STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET Features Type • ■ VDSS RDS on max ID Pw STD90N4F3 40 V < 5.8mΩ 80 A 110 W STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3

p85nf55

Abstract: B85NF55 diode 8405 8405 gc93620 STB85NF55 STI85NF55 STP85NF55 gc93640
Contextual Info: STB85NF55, STI85NF55 STP85NF55 N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STB85NF55 55 V < 0.008 Ω 80 A STI85NF55 55 V < 0.008 Ω 80 A STP85NF55 55 V < 0.008 Ω 80 A • Exceptional dv/dt capability

stp55nf06

Abstract: STB55NF06L STB55NF06L-1 STP55NF06L STP55NF06LFP
Contextual Info: STP55NF06L - STP55NF06LFP STB55NF06L - STB55NF06L-1 N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET II POWER MOSFET TYPE STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 • ■ ■ VDSS RDS on 60 V 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω

8NC50

Abstract: STB8NC50-1 STP8NC50 STP8NC50FP
Contextual Info: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

L9 Zener

Abstract: STB8NC70Z STB8NC70Z-1 STP8NC70Z STP8NC70ZFP
Contextual Info: STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP8NC70Z/FP 700V < 1.2 Ω 6.8 A STB8NC70Z/-1 700V < 1.2 Ω 6.8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω

STB5NC50

Abstract: STB5NC50-1 STP5NC50 STP5NC50FP
Contextual Info: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω

p11nm60fdfp

Abstract: equivalent to220 p11nm60fd STB11NM60FD-1 STP11NM60FD STP11NM60FDFP ZVS phase-shift converters MOSFET 400V TO-220
Contextual Info: STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40Ω - 11A TO-220 / TO-220FP/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDSS RDS(on) ID 600 V 600 V 600 V < 0.45Ω < 0.45Ω < 0.45Ω 11 A 11 A