I1207 Search Results

k2341

Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis­ in millimeters to r designed for high voltage sw itching applications.

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N -charm el P o w e r MOS F ield E ffect T ra n s is ­ in m illim eters to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

001107

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode

D5555

Abstract: upd5555 single monostable multivibrator smd PD555 PD5555G PD5555 556 timer astable multivibrator monostable multivibrator smd single multivibrator smd ic 8pin
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD5555 CMOS TIMER CIRCUIT The /xPD5555 is a CMOS version of the/iPC 617/1555 timer IC. Being a CMOS circuit, the ¿zPD5555 circuit requires only a little current, and outperforms the bipolar version in characteristics such as operating voltage, reset pin function,

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

MEI-1202

Abstract: 2SB800 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 800 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

nec 424800

Contextual Info: bMB?S25 00410^0 EC 2^7 A TA S H E ET 3 MOS INTEGRATED CIRCUIT /¿PD424800-L 4M B IT D Y N A M IC RAM F A S T PA G E M ODE D ESCRIPTIO N The N E C juPD4 2 48 00 -L is a 524288-word by 8 bits dynam ic CMOS RAM w ith optional fast page mode. CMOS sense am plifier, peripheral circuits and 1 transistor memory cell technique realize high speed access, cycle time

29L33

Abstract: 29L05 MPC29L al 232 nec sot39 L1209 29l04 PC29L03T 29L03J C4046
Contextual Info: DATA SHEET NEC / BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC29L00 Series THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION /iP C 2 9 L 0 0 S e ries are tow dropout regulators which have 100 m A c a pa ble for th e output current. T he variatio n of output voltag e is 3 V, 3.3 V, 4 V and 5 V.

Contextual Info: l û î s ¿ n t f- MOS INTEGRATED CIRCUIT uPD4722 RS-232 UNE DRIVER/RECEIVER AT 3.3 V /5 V T h e /iP D 4 7 2 2 is a h ig h -b re a k d o w n v o lta g e silicon g ate C M O S lin e d riv e r/re c e iv e r based on th e E IA /T IA 232 -E s ta n d a rd . T h e in te rn a l D C /D C c o n v e rte r can sw itch b e tw e e n m u ltip le v o lta g e s , a llo w in g it to o p e ra te

ic 8051

Abstract: D78P138 EP 1324 PT001 uPD78P138 PG-2000 PA-78P138GF n11a
Contextual Info: DATA SHEET SEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE HPD78P138 8 BIT SINGLE-CHIP MICROCOMPUTER Th e /iPD78P138 is produced by replacing the m ask ROM of the /¿PD78138 w ith PRO M , * T h ere are tw o types of in te rn a l PRO M: one-time PRO M in w hich data can be w ritte n once, and EPRO M to

2SK1586

Abstract: IEI-1213
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1586 N -C H A N N EL MOS FET FOR S W IT C H IN G The 2SK1586, N-channel vertical type MOS FET, is a switching PACKAGE DIMENSIONS U nit : mm device which can be driven directly by the output o f ICs having a 5 V power source.

pa1520

Contextual Info: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S

surround sound IC upc1891

Abstract: 1891ACY
Contextual Info: MATRIX S U R R O U N D - S O U N D P R O C E S S O R The /uPC1891 A is a specific IC to reproduce surround-sound by using a signal m atrix. The IC is based on a unique high-speed and low-noise bipolar process and high-precision on-chip filter technology, and

2SJ207

Abstract: IEI-1213
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING The 2SJ207, P-channel vertical type MOS FET, is a switching device

PCI458

Contextual Info: GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIER DESCRIPTION FEATURES T h e //PC 1458 is a d u a l g e n e ra l p u rp o s e o p e ra - • In te r n a lly fre q u e n c y c o m p e n s a te d tio n a l a m p lifie r h a v in g in te rn a l fre q u e n c y c o m p e n -

TSC31

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynam ic CMOS RAMs.

740560

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 / 16 M-BIT DYNAMIC RAM 4M -W O RD BY 4-BIT, HYPER PAGE MODE EDO Description The /iP D 42S 17405,4217405 are 4,194,304 words by 4 bits CMOS dynam ic RAMs with optional hyper page mode

TC-2514

Abstract: K2141 tC2514 I-1207
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2SK 2141 is N -c h a n n e l Pow er M O S R e id Effect T ra n s is ­ to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

TC-1628A

Abstract: TC1628 2SB1114 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SB1114 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package

2SK1590

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL MOS FET FOR SWITCHING The 2SK1590, N-channel vertical type MOS FET, is a sw itching

2SJ207

Abstract: IEI-1213
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING The 2SJ207, P-channel vertical type MOS FET, is a switching device PACKAGE DIM ENSIONS U n it: mm which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

C1099G

Abstract: 1099CX PC1099CX PC1099 MPC1099GS PY 472 M
Contextual Info: BIPOLAR ANALOG INTEGRATED C IR C U IT / ¿ P C I 0 9 9 SW ITCHING REGULATOR CONTROL CIRCUIT FOR 500 kHz OPERATION /JPC1099 is a co n tro l IC fo r the high perform ance sw itch in g pow er supply equipped w ith high speed/high s ensitivity protec­ tio n c irc u it. C o n tro l ICs fo r the high perform ance s w itc h in g pow er supply have 3 series o f /j PC1099, T905, 1906. The features

2SK1586

Abstract: IEI-1213
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1586 N -C H A N N EL MOS FET FOR S W IT C H IN G The 2SK1586, N-channel vertical type MOS FET, is a switching