I10MS Search Results

Contextual Info: 2 /a v h + - KU7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF20H1R5 1 5 V 2 0 A >Tjl25°C US V f = 0.41V > 7 ,llÆ -,lb K >$È jfIÎJ±2kV ffilI RATINGS Absolute Maximum Ratings a a i 5 E - fSymbol Conditions Item iXlYrii.HX Storage Temperature

Contextual Info: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description

Contextual Info: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

sd23a

Abstract: ak 957
Contextual Info: PD - 9.1692C International IOR Rectifier IRL3302S PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V ^D S o n =

Contextual Info: Single In-line Package Bridge Diode • H O U T L IN E D IM E N S IO N S i D15XBD 600V 15A Unit ■ mm ■ R A T IN G S Absolute Maximum Ratings £3 if fi £ h j Symbol Item PC - - - At -T3 O perating J u n c tio n Tem perature ± - 4 0 '-150

D1FS4A

Contextual Info: '> 3 7 h ^ - M U T 7 K Schottky Barrier Diode Surface Mounting Device • O U T L IN E D IM E N S IO N S D1FS4A 40V 1.5A ■ R A T IN G S ÎÊ ÎÎü ^ S Ë fè m A b s o lu te M axim um R a tin g s IB # s Item Symbol * A A * TT Conditions tl _ nn ——■

Contextual Info: International [re s ] Rectifier PD — IR L P 2 5 0 5 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching