I0117 Search Results

40EPS

Abstract: IR230DM16CCB
Contextual Info: Bulletin I0117J 09/00 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters Units VFM

40EPS

Abstract: IR230DM16CCB
Contextual Info: Bulletin I0117J rev. A 08/01 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

40EPS

Abstract: IR230DM16CCB probe wafer
Contextual Info: Bulletin I0117J rev. A 08/01 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

PD488170L

Abstract: REF05
Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¿ P D 4 8 8 1 7 0 L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

FR400

Abstract: GR47 W1951 E-4140-B E4403B E4407B E5072 E5070B E5137B E4440
Contextual Info: FUJITSU SEMICONDUCTOR CM71-00205-4E CONTROLLER MANUAL FR-V FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FR-V FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers This manual describes the Softune C/C+ compiler hereinafter referred to as the C/C+

W1951

Abstract: E4403B E4404B E4407B E5062 E4408B itron INC911 LIB911 MB91F154
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM81-00206-3E FR FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FR FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers This manual describes the Softune C/C+ compiler hereinafter referred to as the C/C+

Contextual Info: M 48Z58 A T # . [M O gM |[LI«(M [](gf_ M 4 8 Z 5 8 Y ¿ 7 7 S G S -T H O M S O N 64Kb (8K x 8) ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

Contextual Info: M48Z58 A 7 # . [M»[g[LI gmMD(gS_M48Z58Y / T T S G S - T H O M S O N 64Kb (8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

m4z28-broosh1

Abstract: AN1012 M48Z58 M48Z58Y M4Z28-BR00SH1 SOH28
Contextual Info: w # S C S -T H O M S O N RitiDÊIMDI[LIÊTTIESOBÎIDOS M 48Z58 M 48Z58Y 64Kb 8K • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

E4039

Abstract: W3046 E4413B upc 1026
Contextual Info: FUJITSU SEMICONDUCTOR CM81-00206-2E CONTROLLER MANUAL FR FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FR FAMILY SOFTUNETM C/C+ COMPILER MANUAL for V6 FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers This manual describes the Softune C/C+ compiler hereinafter referred to as the C/C+

ISPVM embedded

Abstract: post card schematic with ispgal Supercool TQFP-100 footprint matrix converting circuit VHDL or CPLD code low pass Filter VHDL code microcontroller using vhdl ISPVM ieee 1532 ispPAC80
Contextual Info: Lattice Semiconductor Corporation • Fall 2000 • Volume 7, Number 1 In This Issue ispGDX 240VA Completes Popular 3.3V Family The SuperFAST Family Just Got Faster! Entire ispMACH™ 4A Family Now Released to Production ispPAC®80 Operating Frequency Extended to

Contextual Info: UNCONTROLLED DOCUMENT PART LPI-C01 1 7 0 1 S - 1 5 0 C NUMBER E.C.N. N U M B E R AN D DATE REV. R E V ISIO N C O M M E N T S B REV. 01 .24.0 7 E.C.N. # 1 1 1 4 8 . A 1 0 .17.1 1 E.C.N. # 1 0 B R D R . B PANEL CUT OUT: 06.00mm. PANEL THICKNESS: 1.80mm ~ 4.80mm.

RAM 2114

Abstract: M48Z58 M48Z58Y M4Z28-BR00SH1 SOH28 caphat
Contextual Info: w # S C S -T H O M S O N M 48Z58 kT # . IM g[j3@l[Li(gTM«(gS_ M 48Z58Y 64Kb (8K • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

NEC RDRAM 36

Abstract: ADR 10 NEC PD488170L PD488170L RDRAM cross reference uPD488170L U/25/20/TN26/15/850/NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling