I PT 0 0 7N 0 6 N Search Results

Contextual Info: 3875081 G E SOLID 01E STATE Optoelectronic S p ecificatio n s- HARRI S SEIHCOND 19642 D - T4I-M SECTOR 37E D M 43G2E71 G0271QM Infrared Emitter T • 1N 6264 1N6264,1N6265 Gallium Arsenide Infrared — Em itting Diode T T he G E Solid State 1N6264 and 1N6265 Series are gallium arsenide, light

Contextual Info: REVISIO NS A J DNEN90N5 ARE IN INCHES FIG. 1 -0 1 : ONE PLACE DECIMALS: ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE - N O. OF POS. x .0787 [2.00] ± .005 [.13] (SEE NOTE 7) DO NO T SCALE FROM THIS P R IN T X 2 mm - - < L - 01 : IN PROCESS SM M -XX-D-S m m -m -n -n

Contextual Info: 6 I 4 5 AP PR O V ED : DATE: _ TITLE: n cq 2,54 ! 'ten* W vD CD CO Ö 3 P IN BRASS 1 G OLD 2 IN S U L A T O R TEFLO N' 1 NONE 1 BO DY BRASS 1 G O LD NO. D E S C R IP T IO N M A T E R IA L Q ’T Y F IN IS H 6 5 ö T 0L 4 -Key I A lM T description 5217

d4b-3a13n

Abstract: 7N66
Contextual Info: H e a vy -D u ty, P o s itiv e - O p e n in g C o n t a c t s Lim it S w it c h D4B-BN Features • Direct-opening contacts ■ Enclosure rating meets IP67 and NEMA 3, 4 , 4X, 6P and 13 ■ International approvals: IEC 947-5-1, EN60947-5-1, UL 508, CSA C22-2 No. 14, VDE 0660 Part 200 snap action type

Q300

Abstract: A600 GLLC01C
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER GLLC01C REV DOCUMENT B 0016843 CHANGED KRB BY 0 7N O V 05 CHECK RJ N O M IN A L T R A V E LS Item s PLATED COPPER ALLOY 010 .393 -10 (.393) B OF (max) fOoeratina force) RF (min) (Release force) PT (max) (Pre-Travet)

Contextual Info: □ RAW ING No,:- P 2 5 - H SHEET PROBE 2 OF 2 HEAD IF IN DOUBT AST NOT TO S C A L E THIRD A N G LE PR O JECT IO N VARIANTS 9G° NO, HARWIN PART NO, P25-1ÜB P25-Ü5B NO, CD fJD OR Pi E R HARWIN PART NO, CODE: 02 , 00 - P253- CD P2P—HU B P25-Q1B S P E C IF IC A T IO N S :

Contextual Info: 90779— SHADED AREA DENOTES POSITION OF COLOUR CODED HOT STAMP MOULD BASE COLOUR: NATURAL 10 20 <29.18 /1.149 24.13I/.950 (27.73)/1.092 (29.64)/1.167 -••08 18 (26.641/1.049 (2 1.59I/.850 (25.191/ .992 (27.10)/1.067 19 — .07 16 (24.10)/ .949 (19.05)/.750

Contextual Info: jkM SPECIFICATION • F L O A T I N G D I S T A N C E :FOR R A D I U S ± 0 . 5mm A ■7 D — T< ±0. 5 N O T E . D O NOT ADD LOAD TO A F L OA TI NG äE. 7n—r-f PART. fciDa.&v'T*T$K APPLICABLE WIRE S E M I - F L E X I B L E C O A X I A L CA B L E 0.14 W

LA 3840

Contextual Info: NOTES: 1. HOUSING MATL. PO LYESTER PBT 15% GLASS FILLED 2. TER. MATL. BRASS 0.281/.0 11 THK PLATING. TIN: ( l.27um /50u" MIN NICKEL UNDER (4-6um )/I60-240U" TIN 3. 4. 5. G. 7. TO UL 94 V-0, BLACK. APPL. CLASS TO DIN 40040 HME (-25°C/+I00°C) PIN PUSH FORCE MIN 7N

30271

Contextual Info: 10 MOULD BA SE COLOUR! NATURAL 90779-*0l3 26 36.801/1.449 (31.751/1.250 (35.351/1.392 (37.261/1.467 14 1 -*012 24 (34.261/1.349 (29.211/1.150 (32.811/1.292 (34.721/1.367 15 -*011 22 (31.721/1.249 (26.671/1.050 (30.271/1.192 (32.181/1.267 16 -.0 10 20 (29.181/1.149

Diode C540

Abstract: C540 DIODE HD74HC541
Contextual Info: HD74HC540,HD74HC541 The HD 74HC540 is an inverting buffer and the HD74HC541 | is a non-inverting buffer. The 3-state control gate operates ^ as a two-input NO R such that if either G- or G 2 are high, # Octal Buffers/Lin e Drivers with 3-state outputs) PIN ARRANGEMENT

sot-23 marking 7z

Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Contextual Info: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1

Contextual Info: F /M F100179 Carry Lookahead Generator R C H IU 3 A S c h lu m b e rg e r C o m p a n y F100K ECL Product Description The F100179 is a high-speed Carry Lookahead Generator intended for use with the F100180 6-bit fast Adder and the F100181 4-bit ALU. Pin Names

Contextual Info: DWG NO: REVISIONS I AD I FIG. -0 1 : 1 ONE PLACE DECIMALS; ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE THREE PLACE DECIMALS: ± .0 0 5 FOUR PLACE DECIMALS: ± .0 0 2 0 - N O . OF POS. x .0 7 8 7 [2 .0 0 ] ± ,0 0 5 [.1 3 ] - 2 mm ANGLES ± H S O C K E T STRIP

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01116 (XN1116) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu

Contextual Info: 9 2 NOTES: j 1. HOUSING MATL. POLYESTER PBT 15% GLASS FILLED TO UL 94 V-0, BLACK. 2. TER. MATL. BRASS 0.28 /.0 11 THK PLATING. TIN: (l.2 7u m )/50 u" MIN NICKEL UNDER ( 4 - 6 u m ) / I6 0 - 2 4 0 U " TIN 3. APPL. CLASS TO DIN 40040 HME C-25°C/+ I00°C) 4. PIN PUSH FORCE MIN 7N

G2JS

Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
Contextual Info: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7

SPK1300

Abstract: SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices
Contextual Info: 8368602 SOLITRON DEVICES INC _ fib 86D 02439 D E jfl3 b flb D 5 n . -rr 3 3 - □ □ 0 5 4 3 c] I i - !" Now There's A Choice! IS O LA T E D A N D G R U 1 D E D D A R U E M iT O If P O V S E R M O D U L E S Paralleled Up To 10,000 Amps DUAL ISOLATED

592p

Abstract: berg plcc 7d8l 2E-1D
Contextual Info: A B C NOTE: 6 8 POSITION S O C K E T SHOWN NEW RELEASE ADDED BERG PART NUMBER TO TABLE CHANGED INSERTION & WITHDRAWAL FORCE VALUES & WEIGHTS ON ALL PLCC SIZES 576 2048 2096 10 /1 4 /9 2 6 /2 7 /9 5 8 /4 /9 5 PCB LAYOUT PLCC B. D E A SY 10/5/92 PLCC— [ ]P — T

PC4061

Abstract: TL061 PIN CONFIGURATION TL061 TL061D
Contextual Info: NEC NEC Electronics Inc. juP C 4061 J -F E T IN P U T L O W -P O W E R O P E R A T IO N A L A M P L IF IE R P R E L IM IN A R Y IN F O R M A T IO N D e s c r ip t io n P in C o n f ig u r a t io n T he jjPC4061 is a J-FE T in p u t lo w -p o w e r ope ra tio n al

DIP20

Abstract: TSSOP14 TSSOP16 196-M
Contextual Info: [ 1 5 ] fâlI'É7~‘—£ TOSHIBA U W ft 6ooc n m m fît i t m Psi & Pt m* h Ea = 0.8eV (pcs) 60°C (Fit) 17660 1 8 6 1 .2 3 x 1 0 6 6 2.3 & m m ft Ta = 125°C V c c = 6V is] >m ¡£ ÍÍE -f y 7 Ta = 125°C V c c = 6V Ta = 150°C V c c = 6V IS] /im fa

R1200

Abstract: R1200F R2500 R5000 R5000F
Contextual Info: SEP ELECTRONIC CORP 24E D • ~OS 000DDS3 D ■ R1200 thru R5000 R1200F thru R5000F HIGH VOLTAGE RECTIFIER VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Amperes R12 0 0 -2 0 0 0 R 2 5 0 0 -5 0 0 0 DO-15 R 2 5 0 0 -5 0 0 0 ' DO-41 (R12 0 0 -2 0 0 0 ) FEATURES

Contextual Info: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A Z Rev. 1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117405)

steam generator iron

Abstract: EFSH
Contextual Info: SHARP LHPV127N 1 .\ i Contents 1. General I 1 i i . . 2 2. Features . 2 3. Pin Configuration and Pin Description . . 3 * I 4. Block Diagraa . y