HYUNDAI CAR Search Results

"VFD,Vacuum Fluorescent Display"

Abstract: still r70 transistor C535 64LQFP GMS81C2012 GMS81C2020 GMS87C2020 piezoelectric buzzer 12V
Contextual Info: MAR. 2000 Ver 1.00 HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS81C2012 GMS81C2020 User’s Manual +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS

GMS800

Abstract: lcd hyundai 10uf HI-LO ALL-07 GMS81508B GMS81516B GMS81516BT GMS81524B GMS81524BT GMS81508A GMS815xxB
Contextual Info: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS81508B GMS81516B GMS81524B User’s Manual Ver. 1.04 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.04 Published by MCU Application Team 1999 HYUNDAI Micro Electronics All right reserved.

97C54

Abstract: siemens gms90c52
Contextual Info: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C3X GMS90C5X GMS97C5X User’s Manual Ver. 3.1a
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1a Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.

usb mp3 module circuit diagram

Abstract: ssfdc MMC spec 1.1 Flash Memory mmc circuit diagram for mmc adapter MAS3507D SDA 6001 Specification MMC 4.4 Specification MMC 4.0 usb media Player circuit
Contextual Info: HYUNDAI Electronics Industries.co.Ltd Preliminary specification Universal Serial Bus USB SSFDC / MMC I/F Controller (GDS30C6001) DATA SHEET GDS30C6001 USB Memory Cards Controller Product Specification 2000 Mar Hyundai Electronics Industries. Ltd
Digital Media

lcd hyundai

Abstract: cpu 315-2 DP ALL-07 HI-LO ALL-07 HYUNDAI 10uf HI-LO ALL-07 Dp 104 GMS800 GMS82512 GMS82516
Contextual Info: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS82512 GMS82516 GMS82524 User’s Manual Ver. 1.00
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team 2000 HYUNDAI MicroElectronics All right reserved.

LG TCON

Abstract: 2a8h t-con lg
Contextual Info: 32K Flash Embedded 8-Bit MCU GMS99C58 DATA SHEET April. 2000 Ver 1.02 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industries Co., Ltd. GMS99C58 HYUNDAI CONTENTS - 1.Overview . 1

GMS87C1404

Abstract: GMS87C1408
Contextual Info: Oct. 1999 Ver 1.0 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C1404 GMS87C1408 User’s Manual HYUNDAI MicroElectronics HYUNDAI MicroElectronics GMS87C1404/GMS87C1408 Table of Contents OVERVIEW . . . . . . . . . . . . . . . . . . . . . . .1 Basic Interval Timer . . . . . . . . . . . . . . . 35

jeida dram 88 pin

Contextual Info: 'HYUNDAI HYC536410 Series 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in

Contextual Info: -HYUNDAI HYC532200 Series 2Mx32 DRAM CARD DESCRIPTION The HYC532200 is the DRAM memory card consisting of sixteen HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in memory in the portable

jeida dram 88 pin

Contextual Info: HYC532410 Series ‘ HYUNDAI 4Mx32 DRAM CARD DESCRIPTION The HYC532410 is the DRAM memory card consisting of eight HY5117400ASLT built in the metal plate housing. The Hyundai DRAM card is optimized orthe applications such as buffering, main and add-in memory in the portable

97C54

Abstract: 97C52 97c51 hyundai GMS97X56 gms90c52 interfacing 8051 with 32k byte eprom and 4k byte
Contextual Info: DEC. 1998 Ver. 3.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90 Series DATA SHEET +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1 Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.

CMA31

Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
Contextual Info: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.01 Author Doowon Choi IT Application Team System IC SBU Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date

hyundai

Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
Contextual Info: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.0 Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date Comments 0.45 April 28, 1999 Draft 0.9 June 15, 1999

ZTA*3.64MG

Abstract: ZTA3.64MG GMS34004T GMS34112T GMS34140T GMS34XXXT capacitor 8d ae gms34140tm fosc-455kHz
Contextual Info: 4-BIT SINGLE CHIP MICROCOMPUTERS GMS34XXXT SERIES USER`S MANUAL • GMS34004T • GMS34112T • GMS34140T Revision 1.0 Published by MCU Application Team in Hyundai Electronics Industrial Co., Ltd.  Hyundai Electronics Industrial Co., Ltd. 1996 All Right Reserved.

HY53C256

Abstract: HY53C256LS
Contextual Info: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

HYUNDAI HI SCAN

Abstract: 20PIN 24PIN GMS81004 GMS81008 GMS81016 GMS81024 GMS81032
Contextual Info: 8-BIT SINGLE CHIP MICROCOMPUTERS GMS810 SERIES USER`S MANUAL • GMS81004 • GMS81008 • GMS81016 • GMS81024 • GMS81032 Revision 3.0 Published by MCU Application Team in HYUNDAI ELCETRONICS Co., Ltd. ¨Ï HYUNDAI ELECTRONICS Co., Ltd. 1998 All Right Reserved.

A11t

Abstract: LTC 5650
Contextual Info: HY51V16100B Series - HYUNDAI 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques

dn729

Abstract: P2254 P22154 P22264 P22328 P2252
Contextual Info: RELIABILITY MONITOR DS1210S JAN '98 MONITOR-HYUNDAI DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1210 C1 9750 DN738347AAA 16 PIN SOIC HYUNDAI-KOREA HEI PROCESS Single Poly, Single Metal 3.0 µm POCL3 reFlow (3um only); FLASH E2PROM (all other tech. numbers)

HY53C256LS

Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
Contextual Info: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

MAY94

Abstract: vve.3 HY53C256 A08H
Contextual Info: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

OSD 9616

Abstract: SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram
Contextual Info: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr
2000 HYUNDAI Micro Electronics All right reserved.

IC TX-2-c

Abstract: Y51480 5LCAC
Contextual Info: HY514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The HY5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.