HYM591 Search Results

Contextual Info: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.

Contextual Info: HYM591610 Series »HYUNDAI SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting ol nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for

Contextual Info: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for

Contextual Info: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for

Contextual Info: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

HYM591000AM

Abstract: bb04 HY531000
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted

HYM591000

Abstract: HY531000 HYM591000M AV93
Contextual Info: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

Contextual Info: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

HYM591000

Contextual Info: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted

HYM591000M

Contextual Info: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine

HYM591

Abstract: HY531000J
Contextual Info: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

HYM591000B

Contextual Info: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is

Contextual Info: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for

HY5118160JC

Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Contextual Info: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM

Contextual Info: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

HYM591000

Contextual Info: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is

D-0300

Contextual Info: “H Y U N D A I SEMICONDUCTOR H Y M 591600 S e r ie s 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\iF decoupling capacitor is mounted for