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SK Hynix Inc


SK Hynix Inc HY57V641620ETP-6 IC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC
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Quest Components	HY57V641620ETP-6		2,359			1 $2.50 10 $2.50 100 $2.50 1000 $1.05 10000 $1.05	Buy Now
SK Hynix Inc HY57V641620ETP7 Electronic Component
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ComSIT USA	HY57V641620ETP7		96			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HY57V641620ETP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HY57V641620ET Abstract: hy57v641620etp HY57V641620 4MX16-Bit Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] Nov. 2004 1.1	Original	16bits 180mA 150mA 133MHz] Page11) Page12) 64Mbit 4Mx16bit) HY57V641620E 400mil HY57V641620ET hy57v641620etp HY57V641620 4MX16-Bit	PDF
hy57v641620etp Abstract: HY57V64 HY57V641620ET Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] Nov. 2004 1.1	Original	16bits 180mA 150mA 133MHz] Page11) Page12) 64Mbit 4Mx16bit) HY57V641620E 400mil hy57v641620etp HY57V64 HY57V641620ET	PDF
hy57v641620etp Abstract: HY57V641620 HY57V641620ELTP HY57V641620ET hy57v64162 576X1 Contextual Info: 64MBit SDRAMs based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 1.0 History First Version Release tOH: 2.0 -> 2.5 Draft Date Remark Nov. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any	Original	64MBit 16bits 64Mbit 4Mx16bit) HY57V641620E 864bit A10/AP hy57v641620etp HY57V641620 HY57V641620ELTP HY57V641620ET hy57v64162 576X1	PDF
HY57V641620ETP Abstract: HY57V641620ET hy57v641620eltp hy57v64162 HY57V641620 Contextual Info: Preliminary HY57V641620E L T(P) Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft May 2004 Preliminary 0.2 Change IDD2(N) Current value (Page 10)	Original	HY57V641620E 16bits 864bit A10/AP HY57V641620ETP HY57V641620ET hy57v641620eltp hy57v64162 HY57V641620	PDF
hy57v641620 Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] 1.1 1. Changed Input High/Low Voltage (Page 08)	Original	16bits 180mA 150mA 133MHz] Page11) Page12) 64Mbit 4Mx16bit) HY57V641620E 400mil hy57v641620	PDF
hy57v641620etp Abstract: HY57V641620ET 4MX16-Bit 875mil Contextual Info: 64MBit SDRAMs based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 1.0 History First Version Release tOH: 2.0 -> 2.5 Draft Date Remark Nov. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for	Original	64MBit 16bits 64Mbit 4Mx16bit) HY57V641620E 864bit A10/AP hy57v641620etp HY57V641620ET 4MX16-Bit 875mil	PDF
Contextual Info: Preliminary HY57V641620E L T(P)-xI Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Sep. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for	Original	HY57V641620E 16bits 864bit A10/AP	PDF