HY57V56420H Search Results

Contextual Info: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.

Contextual Info: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.

Contextual Info: HY57V56420HT 64Mx4-bit, 8KRef., 4Banks, 3.3V DESCRIPTION T h e H Y 5 7 V 5 6 4 2 0 H is a 2 6 8 ,4 3 5 ,4 5 6 b it C M O S S y n c h ro n o u s D R A M , id e a lly s u ite d f o r th e m a in m e m o ry a p p lic a tio n s w h ic h re q u ire la rg e m e m o ry d e n s ity a n d h ig h b a n d w id th . H Y 5 7 V 5 6 4 2 0 H is o rg a n iz e d a s 4 b a n k s o f 1 6 ,7 7 7 ,2 1 6 x 4 .

Contextual Info: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.

Contextual Info: HY57V56420H 4 Banks x 16M x 4Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH