HY57V56420A Search Results

HY57V56420A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HY57V56420A L T 64Mx4-bit, 8K Ref., 4Banks, 3.3V DESCRIPTION The HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	OCR Scan	HY57V56420A 64Mx4-bit, 456bit 216x4. 400mil 54pin	PDF
Contextual Info: HY57V56420A L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	HY57V56420A 456bit 216x4. 400mil 54pin	PDF
HY57V56420A Contextual Info: HY57V56420A 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	HY57V56420A HY57V56420A 456bit 216x4. 400mil 54pin	PDF
Contextual Info: HY57V56420AT 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	HY57V56420AT HY57V56420A 456bit 216x4. 400mil 54pin	PDF
Contextual Info: HY57V56420AT 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	HY57V56420AT HY57V56420A 456bit 216x4. 400mil 54pin	PDF
1gb pc133 SDRAM DIMM 144pin Abstract: 54-PIN PC100 gm72v66841 Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh	OCR Scan	200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841	PDF
PC100 Abstract: PC133 54-PIN HYM71V653201 Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH	OCR Scan	200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201	PDF