HY57V28820AT Search Results

4Mx8

Abstract: HY57V28820AT-H
Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of

Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.

HY57V28820ALT-6

Abstract: HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S
Contextual Info: HY57V28820A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.

HY57V28820ALT-6

Contextual Info: HY57V28820A L T 16MxS-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.

HY57V28820AT-H

Abstract: HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT
Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of

Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of

HY57V28820AT-H

Abstract: HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S
Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH

UT20001

Contextual Info: HY57V28820A L T-I 16Mx8-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION T h e H y n i x H Y 5 7 V 2 8 8 2 0 A is a 1 34, 2 1 7 , 7 2 8 bit C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s which require low power cons um pt ion