HY57V28420A Search Results

PC100

Abstract: 16MX64 16MX8 8MX16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V

Contextual Info: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of

Contextual Info: HY57V28420A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.

HY57V28420AT-H

Contextual Info: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.

HY57V28420AT-H

Abstract: 8MX4
Contextual Info: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.

Contextual Info: HY57V28420A L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.

Contextual Info: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

Contextual Info: HY57V28420HD L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of

Contextual Info: HY57V28420HC L T 32Mx4-bit, 4 K Ref, 4 B an ks„ 3.3V D E S C R IP T IO N The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

HY57V28420HCT-S

Abstract: hy57v28420hct-h
Contextual Info: HY57V28420HC L T 0.1 : Hynix Change 0.2 : Burst Mode Sigle Write Mode Correction Rev. 0.2/Aug. 01 1 HY57V28420HC(L)T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory

Contextual Info: HY57V28420HD L T 4Banks x 8M x 4bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of

HY57V28420HCT-S

Contextual Info: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH