HY IC Search Results

HV133WX1-100

Abstract: 20347-040E-02 20345-040T-02 20347-040E HV133WX1 20397-008E lcd 13.3 monitor led 2600 t series pressure transmitter 20347 I-PEX lvds 40 pin
Contextual Info: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF B OE HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF B OE HY DIS AND MUS T B E R E T UR NE D T O B OE HY DIS UP ON IT S R E QUE S T

hall effect position sensor 503

Abstract: an 503 sensor hall an 503 hall sensor hall sensor N 503 n 503 hall sensor Aerospace Rotary
Contextual Info: HY LIKE S E N S O R -T E C SPEED Iriselkammerstr. 10 82008 Unterhaching Tel.: 089/614 503 30 Fax: 089/614 503 34 URL: www.hy-line.de E-Mai!: sensortec@hy-line.de & POSITION CONTROL PRODUCTS APPLICATIONS: M ARIN E: Throttle position Outboard m otor position

Contextual Info: Jan 2013 Vinatech VinaTech, based in Korea, is a fast growing manufacturer of Electric Double Layer Capacitor EDLC and Hybrid Capacitor (P-EDLC) HY-CAP brand of Super Capacitors. The HY-CAP series offers high capacitance ranges from 500mF to 500 Farad in EDLC and the Hybrid P-EDLC

HY1Z-24V

Abstract: HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information
Contextual Info: HY High Sensitivity 1 Form C Relay in Ultra Small Size 12 .472 HY-RELAYS 7.4 .291 UL File No.: E43149 CSA File No.: LR26550 10.1 .398 • High sensitivity: 150 mW/200 mW • A wide range of ambient temperature: –40°C to +70°C –40°F to +158°F • Sealed construction

HV121P01-101

Abstract: inverter sic 141 rev 00 repair lcd monitor samsung T-CON SAMSUNG LCD samsung t-con THC63LVDM63A samsung ccfl backlight inverter DF19L-20P-1H X199 DF19G-20S-1C
Contextual Info: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF HY DIS AND MUS T B E R E T UR NE D T O HY DIS UP O N IT S R E QUE S T T I T LE : H V 1 2 1 P 0 1 - 1 0 1

SBTCJ-1W

Abstract: R04350B TB-227 AT790 CASE STYLE
Contextual Info: 4$>*=3 THIRD ANGLE PROJECTION REV ECN No. OR M82767 M102713 À SUGGESTED AT790 CASE REVISIONS DESCRIPTION M O U N T IN G STYLE. C O N F IG U R A T IO N ”n k ” PIN DR AUTH DATE 12/26/02 MMG 10/27/00 MMG NEW RELEASE ADDED ’’.WITH SMOBC” HY HY FOR

DB714

Abstract: CAPACITOR 0805 R04350B M706
Contextual Info: REV OR A B C REVISIONS DESCRIPTION ECN No. M 70611 M 71500 M 82377 M l0 2 7 1 3 DR AUTH DATE 0 2 /0 0 NEW RELEASE ADDED SOLDER MASK AMD LEGEND 0 4 / 0 0 08/06/02 UPDATED DRAWING 02/15/06 UPDATED NOTES IL IL GF AV DB DB HY HY SUGGESTED MOUNTING CONFIGURATION FOR

BB02-HY

Contextual Info: CUSTOMER PRODUCT SPECIFICATION SHEET BB02-HY BB02-HY;- 2.5A-MM PIN H E A D E R , S I N G L E ROW, S T R A I G H T , S M T T Y P E , 2 TO AO C O N T A C T S SPECIFICATIONS CURRENT RATING INSULATOR RESISTANCE CONTACT RESISTANCE DIELECTRIC W IT H ST A N D IN G

Contextual Info: HY COMP INC 34E D • 4b 4775 4 0000306 ■ h îc o m p T , „<Ä7M >/B / 4 ■ HCI ; 7 ~S'%'07W H C 2710 H C 2711 H C 2712 Hy Comp , Inc. + 10V, - 1 0 V , and ± 1 0 V Ultra S tab le V o lta g e R eferences FEATURES • Improved Drop-in Replacements for AD2710 Series

ic 4050 pin diagram

Abstract: telefunken ta 750 amplifier rc coupled amplifier application of ic 4050 4050B TELEFUNKEN* amplifier telefunken ta 750
Contextual Info: Tem ic U 4050 B TELEFUNKEN Semiconductors Speech Circuit with Line-powered Loudspeaker Amplifier Description The electronic speech circuit U 4050 B is a linear inte­ grated circuit for use in telephone sets. It replaces the hy­ brid transformer, side tone equivalent and ear protection

lem module 50-p

Abstract: lem hy 50-p lem module
Contextual Info: Current Transducers HY 50-P IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary nominal current rms

lem hy 10-p

Abstract: 20-P 25-P HY-5
Contextual Info: Current Transducers HY 5.25-P IPN = 5 . 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary nominal

RNR55

Contextual Info: ANGSTROHM TYPES HN, HS, HT, HY FEATURES * Qualified to MIL-R-55182 Characteristics C and E • Performance far exceeds the requirements of MIL-R-55182 Excellent long term stability Highest reliability Hermetic glass enclosure is impervious to harmful environments

Contextual Info: January 2007 HYB18L256169BFX-7.5 HYE18L256169BFX-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM RoHS Compliant Product Data Sheet R ev . 1 . 01 HY[B/E]18L256169BFX-7.5 256-Mbit Mobile-RAM HYE18L256169BFX-7.5 Revision History: 2007-01 , Rev. 1.01 Page

50psp1

Contextual Info: Current Transducers, HY 50-P/SP1 IPN For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). = 50 A Electrical data Primary nominal r.m.s. current

Contextual Info: HY-9674 J3 HARRIS ADVANCED Sampling 12 Bit A /D Converter with 8/16 Bit >wP Interface Applications Features • Com plete 12 Bit Sampling Reference and Clock A /D Converter with • Throughput Rate (Typical 12 B it. 77kHz

lem hy 10-p

Abstract: ho 10-p HY-05 HY Electronic R/HY-05+HYCOM
Contextual Info: IPN Current Transducers HY 5 to 25-P/SP1 For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit) with unipolar power supply. = 5 . 25 A

hyb18l512160bf

Contextual Info: December 2006 HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM RoHS compliant Data S heet Rev. 1.22 Data Sheet. HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM HYB18L512160BF-7.5, HYE18L512160BF-7.5 Revision History: 2006-12, Rev. 1.22

Contextual Info: April 2007 HYB18L256320CF-6/-7.5 HYE18L256320CF-6/-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data Sheet Rev. 1.32 Data Sheet HY[B/E]18L256320CF 256-Mbit Mobile-RAM Revision History: Rev. 1.32, 2007-04 Page Subjects major changes since last revision

Contextual Info: Advanced Micro Devices Am29827A High-Performance Buffer DISTINCTIVE CHARACTERISTICS • High speed buffers and i nverters - tpo = 5.0 ns typ - Inverting tpo = 4.5 ns typ ■ 200 mV minimum input hy steresis on Input data ports ■ Three-state outputs glitch-free during power-up

Contextual Info: DENSE-PAC m icrosystem s f t l- ^ { L I A S t o S High Density Memory Device 128 Megabit Synchronous DRAM DPSD4MX32RY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The /U-'DettMi series is a Jam Hy o f inteichangeabJe m em oiym oduJes. The 128 M egabitSD RAM isam em b er

HYB18L256169BF-7.5

Contextual Info: December 2006 HYB18L256169BF-7.5 HYE18L256169BF-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Mobile-RAM RoHS Compliant Product Data S heet Rev. 1.02 Data Sheet, HY[B/E]18L256169BF-7.5 256-Mbit Mobile-RAM HYB18L256169BF-7.5, HYE18L256169BF-7.5 Revision History: 2006-12, Rev.1.02

Contextual Info: H'iCOMP _ neziio/ft Hy Com p, Inc. j ! HC2710 HC2711 HC2712 10V, -10V, and ±10V Ultra Stable Voltage References + FEATURES DESCRIPTION • The HC2710 Series are Ultra Stable Voltage References that use Thin Film Hybrid technology to achieve extrem ely accurate, low tem perature coeffi­

Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide