HWL26YC Search Results

HWL26YC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HWL26YC		Hexawave	1.7 W L-band power FET via hole chip	Original	PDF	62.37KB	2

HWL26YC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HWL26YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET	Original	HWL26YC 123456789ABC7DEF7 HWL26YC	PDF
IN 5406 Abstract: F24G 1S121 M 16100 39 2 1019 Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.	OCR Scan	HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: HWL26YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET

Original

HWL26YC 123456789ABC7DEF7 HWL26YC

PDF

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

OCR Scan

HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019

PDF