HSG20 Search Results

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

id 0835

Contextual Info: HSG2003 SiGe HBT High Frequency Medium Power Amplifier REJ03G0445-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 32.5 GHz typ. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ. f = 5.8 GHz

HSG2071B

Abstract: HSG2072B
Contextual Info: 厦 门 华 联 电 子 有 限 公 司 Xiamen Hualian Electronics Co. , Ltd. 产品规格书 SPECIFICATION 产品名称：数码显示器 LED DISPLAY 产品型号：HSG2071B HSG2072B 电 话：（0592）6037469 传 真：（0592）6037471 E-mail ：xmhlec@public.xm.fj.cn

STR 0929

Abstract: str 1195 HSG2001 HSG2001VF 0-0966 067-9
Contextual Info: HSG2001 SiGe NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0168-0200Z Rev.2.00 Apr.20.2004 Features • High Transition Frequency fT = 20 GHz typ. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ. f = 1.8 GHz

811 0305 01

Abstract: ic 747
Contextual Info: HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 30 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

KA 1046 Y 839

Abstract: KA 1046 Y 840
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

HSG2092B

Abstract: 7 seg display common anode 7 seg display common cathode
Contextual Info: 厦 门 华 联 电 子 有 限 公 司 Xiamen Hualian Electronics Co. , Ltd. 产品规格书 SPECIFICATION 产品名称：数码显示器 LED DISPLAY 产品型号：HSG2091B HSG2092B 电 话：（0592）6037469 传 真：（0592）6037471 E-mail ：xmhlec@public.xm.fj.cn

0204-50

Abstract: PCB 621 REV,4 491 7318 IC KA 5676 4200 8822
Contextual Info: HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

HSG2092B

Contextual Info:       Xiamen Hualian Electronics Co. , Ltd.  SPECIFICATION   LED DISPLAY  HSG2091B HSG2092B   05926037469   05926037471 E-mail xmhlec@public.xm.fj.cn Website : www.xmhl.com    ( ) 361006 !"#$%&' PDF  "FinePrint pdfFactory Pro" 

WQFN0202-8V

Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 30 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

6228

Abstract: s 8050 d 331
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RQG2003

Abstract: SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
Contextual Info: Renesas Technology Releases SiGe Power Transistor Achieving Industry’s Highest Performance Level for Power Amplifier Use in Wireless LAN Terminals, etc.  Offering 2.4 GHz/5 GHz dual-band compatibility and allowing implementation of low-power-consumption products 

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

str 1195

Abstract: HSG2001 HSG2001VF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid