HPD434004 Search Results

Contextual Info: ÍIP D 4 3 4 0 0 4 I d illi W 1 ,0 4 8 , 5 7 6 X 4 - B i t NEC Electronics Inc. Static CMOS RAM Description Pin Configuration The juPD434004 is a 1,048,576-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design with CMOS peripheral circuits and

Contextual Info: PRELIM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE /¿PD434004 4 M BIT CM O S FAST STATIC RAM D E S C R IP T IO N The /iP D 434004 is a high-speed, 1048576 words by 4 -bit CMOS static RAM fabricated w ith short channel silicon-gate CMOS process. The ¿ PD434004 is a very high speed device using both an advanced CMOS process and excellent c ircu itry

Contextual Info: bMETSaS OOMöTTI TMÖ • NECE NEC Fast Static RAMs ORGANIZATION FEATURES PACKAGE 128K x 8 Output enable 4SOJ 400-mil 15 ns 17 ns 20 ns |iPD431008LE - 15 - 17 -2 0 128K x 9 Output enable SOJ (400-mil) 15 ns 17 ns 20 ns |i.PD431009LE -1 5 -1 7 -2 0 6 4 K x 16