HPD431016 Search Results

NEC B 536

Abstract: VQH200
Contextual Info: NEC fiPD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­ ory cells. It is suitable for cache memory and buffer

Contextual Info: N E C ELECTRONICS INC blE ]> • NEC NEC Electronics Inc. bM27S25 003517b 201 « N E C E fiPD431016 65,536 x 16-Bit Static CMOS RAM Description Pin Configurations The pPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology,

NEC 41-A 002

Contextual Info: JUPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /JPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­

D431000AGZ

Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Contextual Info: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is