JUPD431016 Search Results

D431016LE

Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Contextual Info: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ÎPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The JUPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V + 0.3 V.

NEC 41-A 002

Contextual Info: JUPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /JPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n The ¿iPD431016 is a high speed, lo w power, 1 048 576 bits 65 536 w ords by 16 bits CMOS static RAM. The /jPD431016 are packed in 44-pin plastic SOJ. F e a tu re

NEC B 536

Abstract: VQH200
Contextual Info: NEC fiPD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­ ory cells. It is suitable for cache memory and buffer

NEC B 536

Abstract: 431016LLE
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

d431016

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .