HONEYWELL SOI CMOS Search Results

Contextual Info: Honeywell RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened - 0.65 nm Leff RICMOS™ IV SOI Process, HX2000 - 0.55 nm Leff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw

honeywell SOI CMOS

Contextual Info: Honeywell Preliminary RICMOS " — LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Total Dose Hardness of >1x106 rad S i02 • Fabricated on Honeywell’s Radiation Hardened 0.55 |im RICMOS IV SOI Process

HX3800

Abstract: hx3400 HX-340
Contextual Info: Honeywell Preliminary HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 |im RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Total Dose Hardness >3x106 rad(SiOg)* • Array Sizes to 925K Usable Gates

honeywell SOI CMOS

Abstract: HLX2000 HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 HLX2600 Silicon on insulator SRAM 900170
Contextual Info: Honeywell RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 ^mLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing

HX2080

Abstract: HX2160 HX2000 HX2040 HX2300 rad asic
Contextual Info: RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw

HX2000

Abstract: HX2040 HX2080 HX2160 HX2300 military IMU
Contextual Info: RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw

HX2160

Contextual Info: Honeywell HX2000 RICMOS" — SOI GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm R IC M O S IV SOI Process • Total Dose Hardness of >1x106 rad S i02 • Array Sizes from 10K to 336K Available Gates (Raw) Dose Rate Upset Hardness: >1x10'°rad(Si)/sec (5V)

Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

honeywell hx3000

Abstract: HX306G HX311G HX303G HX3000 HX314G
Contextual Info: HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 µm Leff RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Array Sizes to 1M Usable Gates • Total Dose Hardness ≥3x105 rad(SiO2 )

HX6856

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to125°C Fabricated with RICMOS” Silicon on Insulator (SOI) 0.7 |im Process • Access Time < 25 ns

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through

CDIP2-T28

Contextual Info: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)

HX6856

Abstract: ceramic insulator high voltage Honeywell Capacitors
Contextual Info: Honeywell Military Products Advance Informatio i 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to 125°C Fabricated with RICMOS Silicon on Insulator (SOI) 0.7 nm Process • Access Time s 25 ns

Contextual Info: Honeywell Military Products Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 nm Process Total Dose Hardness through 1x106 rad(Si02) • Full military temperature operation (-55°C to 125°C)

honeywell hx3000

Abstract: HX3000
Contextual Info: HIGH PERFORMANCE SOI-V GATE ARRAYS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened TM 0.30µm Leff RICMOS Silicon On Insulator (SOI-V) process Array Sizes to 1.0M Usable Gates 3.3V or 2.5V Core Operation

honeywell SOI CMOS

Abstract: HLX2000 Silicon on insulator SRAM HLX2015 HLX2060 HLX2120 HLX2240 HLX2450
Contextual Info: RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 µmLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing

DQ4-21

Contextual Info: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process

Transistors smd A7H

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

HLX2000

Abstract: HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 Silicon on insulator SRAM honeywell SOI CMOS
Contextual Info: RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 µmLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing