HN3C10F Search Results

Contextual Info: TO SHIBA HN3C10F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

Contextual Info: TO SHIBA HN3C10FT TENTATIVE TOSHIBA TRANSISTOR H M • ■ m 'm SILICON NPN EPITAXIAL PLANAR TYPE i f HF l n F T■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 ±0.1 • TW O devices are built in to the super-thin and ultra super 1.25 ± 0.1

Contextual Info: TO SHIBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 -1

Contextual Info: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2

Contextual Info: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2

2SC5086

Abstract: HN3C10FE
Contextual Info: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 p: 6 o o o p MOUNTED DEVICES

HN3C10FU

Contextual Info: TOSHIBA HN3C10FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C10FU V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS Unit in mm 2.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads ± 0.1 M A X IM U M RATINGS (Ta = 25°C)

2SC5086

Abstract: HN3C10FT
Contextual Info: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

2SC5086

Abstract: HN3C10FT ultra low noise NPN transistor C2 marking
Contextual Info: T O S H IB A HN3C10FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C1OFT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • h0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

HN3C10FU

Contextual Info: TO SH IBA HN3C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL

HN3C10F

Contextual Info: TO SHIBA HN3C10F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC

marking IAY

Abstract: HN3C10F
Contextual Info: HN3C10F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 OF Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA HN3C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C1OFU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

2SC5086

Abstract: HN3C10FT
Contextual Info: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

transistor 2SC5066

Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Contextual Info: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or