HN SOT23 Search Results

Contextual Info: Vishay Intertechnology, Inc. Super 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products MKP1848S Film Capacitor Film capacitors with slim design. 2 VCUT05D1-SD0 BiSy Single-Line ESD

MPMA (Divider)

Contextual Info: V is h ay I n tertec h n olo g y, I n c . Resistors - Ideal for High-Precision Automotive Applications I INNOVAT AND TEC O L OGY MPMA Divider N HN THIN FILM RESISTOR NETWORK O 19 62-2012 Matched Pair Molded Automotive Thin Film, SOT-23, Surface-Mount Resistor Network, AEC-Q200 Qualified

PTN0805

Abstract: ORNV (Divider) MPMA (Divider) DFN (Divider) vr Molded, SOT-23 Thin Film Surface Mount Resistor/Capacitor Network
Contextual Info: VISHAY INTE R TE C HN O L O G Y , IN C . INTERACTIVE data book Vishay Dale thin film products vishay Dale thin film vse-db0024-1309 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/

SQ3427

Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
Contextual Info: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/

1N4148 SOD-80 ST

Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES

Contextual Info: Vishay Intertechnology, Inc. SuPER 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products mkP1848S フィルムコンデンサ 薄型設計のフィルムコンデンサ 2 VCuT05D1-SD0 双方向対称型

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Contextual Info: V is h ay I n t e rt e c h n olo g y, I n c . I INNOVAT AND TEC O L OGY MPM Series N HN Thin Film Resistors O 19 62-2012 Resistors - Precision Matched Pair Networks Precision Matched Pair Resistor Networks Key Benefits • • • • • 1:1 to 100:1 ratio range

Si7141

Abstract: SiA447DJ SI7615A
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on

SiB914

Abstract: SiA427DJ si2329ds si8802
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS

DFN (Divider)

Abstract: ORNV (Divider) MPMA (Divider)
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Resistors - Integrated Resistor Network Technology AND TEC I INNOVAT O L OGY Precision Dividers and Networks N HN THIN FILM RESISTOR NETWORKS O 19 62-2012 Precision Thin Film Technology Introduction This capabilities brochure is designed to help circuit designers and component engineers

MOSFET testing

Contextual Info: V i s h ay I n t e rt e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMM Medical Flow N HN Power mosfets O 19 62-2012 MOSFETs - Enhanced Quality Control SMM Process Flow for Medical Implantable Applications Key Benefits • Strict manufacturing process controls result in high quality and reliability

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

SMBJxxA

Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

ir transmitter receiver

Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
Contextual Info: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA

D7415

Abstract: DIODE CG4 HN SOT23-5
Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in 5 Pin SOT-23 AD7415 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature range: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface

AD5327

Abstract: Ld SOT-23 t12
Contextual Info: µA, 2-Wire Interface, +2.5 V to +5.5 V, 500µ Quad Voltage Output 8-/10-/12-Bit DACs Preliminary Technical Data AD5306/AD5316/AD5326* a FEATURES AD5306: Four Buffered 8-Bit DACs in 16-Lead TSSOP AD5316: Four Buffered 10-Bit DACs in 16-Lead TSSOP AD5326: Four Buffered 12-Bit DACs in 16-Lead TSSOP

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

sot23-5 cga 5pin

Abstract: AD7414 AD7414ART-0REEL7 AD7415 SOT-23 5 PIN
Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in SOT-23 AD7414/15 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature ranges: -55 oC to +125 oC Accuracy of ±2 oC SMBusTM/I2CR Compatible Serial Interface 3µA Power-Down Current

AD8602ARM2

Contextual Info: a Preliminary Technical Data FEATURES Low Offset Voltage Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 700 µA/Amplifier Wide Bandwidth: 8 MHz Slew Rate: 5 V/µs No Phase Reversal Low Input Currents Unity Gain Stable APPLICATIONS Barcode Scanners

la sot23-8 analog

Abstract: AD7414 AD7414-0 code d12 6-pin sot-23 D7414 HN SOT23
Contextual Info: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in SOT-23 AD7414 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature ranges: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface

AD5327

Abstract: P2103 P2101A spi 3 wire
Contextual Info: a µA,Quad Voltage Output +2.5 V to +5.5 V, 500µ 8-/10-/12-Bit DACs in 16-Lead TSSOP Preliminary Technical Data FEATURES AD5307: Four Buffered 8-Bit DACs in 16-Lead TSSOP AD5317: Four Buffered 10-Bit DACs in 16-Lead TSSOP AD5327: Four Buffered 12-Bit DACs in 16-Lead TSSOP

Contextual Info: D IS C R E T E PO W ER AND SIGNAL TEC H N O L O G IES P -M J R C H iL iiO SÊM CO NDUOTQR BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE P d . . . .350 mW @ T a = 25 Deg C Bv . . . .250 V M i n @ I r = 100 uA T rr . . . 50 nS @ If =Ir = 30 mA Irr = 3.0 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1)