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    hmf-0302

    Abstract: HMF0302
    Contextual Info: HARRIS MU S E M I C O N D U C T O R Jgj H A R R I S HbE D • 43D22bS OOOOlflT 5 ■ H M S HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		43d22bshmf-03020hmf03000t--31--25+2hmf-0302hmf0302 PDF

    XL 1402

    Contextual Info: SAMSUNG ELECTRONICS INC Jg HARRIS bOE D • 7 ^ 4 1 4 2 D011Ô52 534 M S H Û K HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		hmf-03020hmf03000proce866xl 1402 PDF