HMF03000 Search Results

HMF03000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
hmf-0302 Abstract: HMF0302 Contextual Info: HARRIS MU S E M I C O N D U C T O R Jgj H A R R I S HbE D • 43D22bS OOOOlflT 5 ■ H M S HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	43d22bs hmf-03020 hmf03000 t--31--25 +2hmf-0302 hmf0302	PDF
HMF03010 Contextual Info: HARRIS riU SEMICONDUCTOR MbE D • HBDSShT 000 01Ö 5 Ö ■HMS T=3 i- a s " H M F-0 3 0 1 0 SI HARRIS Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	hmf-03010 hmf03000 hmf03010	PDF
HMF-03000 Contextual Info: HARRIS Mil SEMICONDUCTOR 23 HARRIS 4bE » • 4 3 Q E 2 t . cl O Q Q Q l ^ 4 ■ T -3 1 -3 5 HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates	OCR Scan	43qe2t hmf-03000	PDF
XL 1402 Contextual Info: SAMSUNG ELECTRONICS INC Jg HARRIS bOE D • 7 ^ 4 1 4 2 D011Ô52 534 M S H Û K HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	hmf-03020 hmf03000 proce866 xl 1402	PDF
"Harris microwave" Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS bDE D 7 ^ 4 1 4 2 Güllfin E DE HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability	OCR Scan	hmf-03000 harris microwave	PDF