HMC414 Search Results

HMC414MS8G

Contextual Info: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: HMC414MS8G / 414MS8GE v03.0505 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS

Contextual Info: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

HMC414

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0103 HMC414MS8G PRODUCT NOTE Designing w/ The HMC414MS8G PA Utilizing a Low Cost Laminated Printed Circuit Board

HMC414MS8G

Contextual Info: HMC414MS8G / 414MS8GE v04.0607 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS

Contextual Info: HMC414MS8G v00.0901 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB Saturated Power: +30 dBm

GETEK FR4

Abstract: FR4 dielectric constant at 2.4 Ghz Rogers 4350 r04350 FR4 substrate height and thickness FR4 dielectric constant vs temperature relative permittivity of fr4 HMC414MS8G RO4350 loss tangent of FR4
Contextual Info: v00.0103 HMC414MS8G PRODUCT NOTE Designing w/ The HMC414MS8G PA Utilizing a Low Cost Laminated Printed Circuit Board General Description The HMC414MS8G is a high efficiency GaAs InGaP Hetrojunction Bipolar Transistor HBT MMIC power amplifier, which operates between 2.2 - 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8

Contextual Info: HMC414MS8G / 414MS8GE v03.0505 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS

HMC414MS8G

Contextual Info: HMC414MS8G / 414MS8GE v03.0505 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS

HMC414MS8G

Contextual Info: HMC414MS8G / 414MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V

HMC414MS8GE

Abstract: HMC414MS8G
Contextual Info: HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V

HMC414MS8G

Contextual Info: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V

HMC676LC3C

Contextual Info: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE

HMC734

Abstract: AG602-89 HMC807LP6CE SPI op amp mar 4sm hmc849 HMC516 HMC332 hmc783lp6ce ERA-4SM EAR99
Contextual Info: g ra tin Ye ar s 25 Ce leb Œ Inn ov ce vi y lit Œ ion Qua at ῵ᢳ ⏋ড়ֵো䲚៤⬉䏃ˈ 䲚៤ 䏃 ῵ഫˈ ഫ ᄤ㋏㒳 Ҿ㸼 㒳 Ҿ㸼 DC - 110 GHZ ≑䔺⬉ᄤ Telematics & Sensors ᆑᏺ䗮ֵ Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

hmc506

Abstract: HMC676LC3C
Contextual Info: g ra tin s Ye ar 25 Ce leb ΠInn ov ce vi y lit Πion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE

HMC415

Abstract: microwave mosfet
Contextual Info: MICROWAVE CORPORATION v00.0103 A SIMPLE CMOS POWER CONTROL CIRCUIT FOR THE HMC408LP3 AMPLIFIER General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v01.0902 INCREASE DESIGN FLEXIBILITY USING HBT AMPLIFIERS WITH CURRENT CONTROL Introduction

Contextual Info: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE

mmds down converter

Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
Contextual Info: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power

10 GHz wideband mixer

Abstract: hmc480 AD8370 ADRF6820 HMC394 HMC451 hmc1118
Contextual Info: RF AND MICROWAVE IC Selection Guide 2015 Visit analog.com/RF-microwave 2 RF and Microwave IC Selection Guide 2015 From Antenna to Bits and Back … using a unique combination of design skills, systems understanding, and process technologies, Analog Devices offers

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier

HMC414MS8G

Abstract: HMC407MS8G HMC326MS8G HMC327MS8G HMC406MS8G HMC408LP3 HMC413QS16G HMC415LP3 microwave transceiver HMC415
Contextual Info: v01.0902 INCREASE DESIGN FLEXIBILITY USING HBT AMPLIFIERS WITH CURRENT CONTROL Introduction In applications where the designer must control power level, several traditional circuits such as AGC amplifiers, voltage variable attenuators or digital attenuators are commonly used. In transmit applications where active

HMC408LP3

Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Contextual Info: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.