HM20 Search Results

Contextual Info: HUALON MICROELECTRONICS 54E D MSTflOMl 0000DEL 5 • '’’’n HO - 1 ^ HM2052 r = = HM2051 VOICE SYNKSIZERIC PCM SPEECH SYAIHESIZERIC Feature Feature * * * * * Single power supply 3.0-6.5 V. * Provides voice trigger, and level trigger mode to activate the chip.

hm2004

Contextual Info: HUALON MICROELECTRONICS E4E D m m HM2004 ADM VOICE CODERIDECODER U 4STflD41 OODOOES 3 HM2050 VOICE SYNTHESIZER 1C Feature Feature * 28 pin DIP packa ge. * A sin gle c h ip LSI for vo ic e re co rd in g / reproducing. * Build in D-RAM interface with the ca p a city up

HM200

Abstract: HM200101 HM117 hm2001
Contextual Info: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching

transistor GK sot-89

Abstract: HM200 sot-89 Marking GK HMM1225 HMX1225 sot marking HX HM200501
Contextual Info: HI-SINCERITY Spec. No. : HM200501 Issued Date : 2000.07.01 Revised Date : 2005.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMX1225 / HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner

Contextual Info: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver.

Contextual Info: SPECIFICATIONS Power Connector HM20 Series Vertical, T/H Type 4.20mm [.166"] Pitch Mechanical Contact Retention Force: 0.91Kg min. Durability: 500 Cycles Electrical Voltage Rating: 600V Current Rating: 10A per contact min. Dielectric Withstanding Voltage: 1500V AC

Contextual Info: SPECIFICATIONS Power Connector Mechanical Contact Retention Force: 0.91kg min. Electrical HM20 Series Vertical, T /H Type 4.20mm x 4.20mm Grid [.165” x .165” ] Voltage Rating: 600V Current Rating: 10A Dielectric Withstanding Voltage: 1500V AC Insulation Resistance: 1000MΩ

HM2004

Abstract: HM2050 HM200 Z227 "Piezo Buzzer" 5v voice recording chip coder m-lcd
Contextual Info: HUALON MICROELECTRONICS S4E D • HM2004 um p m = = = ? = = = MSTAD41 OODOOHS 3 ■ '7 1 .H 1 ~ Ì % HM2050 vaC E coom iC O D ER VOICE SYNJHESIZER 1C Feature Feature * 28 pin DIP package. * A single ch ip LSI for voice recording/ reproducing. * Build in D-RAM interface with the capacity up

hm112

Contextual Info: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching

HM200

Abstract: HM3669
Contextual Info: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching

7805 SOT89

Abstract: 7805m 7805 sot-89 SOT-89, 7805 HM200 7805 SOT-89 1 in 7805 pin diagram H7805 H7805AM H7805BM
Contextual Info: HI-SINCERITY Spec. No. : HM200303 Issued Date : 1998.08.01 Revised Date : 2003.07.15 Page No. : 1/3 MICROELECTRONICS CORP. H7805AM H7805BM Low Current Positive Voltage Regulator Of Surface Mount Device Description SOT-89 The H7805_M series of surface mount device regulators are easy-to-use

HM202P08

Abstract: HM402N10
Contextual Info: 2,000V - 4,000V Miniature Hybrid Multiplier 100µA - 200µA • 8 - 10 Stages ELECTRICAL CHARACTERISTICS AND PHYSICAL DIMENSIONS Part Number Maximum A.C. Input Voltage Vin Maximum D.C. Output Voltage (Vout) Typical Output Current (Io) Typical Frequency HM202P08

hm2007

Abstract: 6264 SRAM HM2007L HM2007P aT64K3 circuit diagram of speech recognition voice recognition system hm-2007 circuit diagram of voice recognition TEMA
Contextual Info: GEN ERA L D ESCRIPTION HM2007 is a single chip CMOS voicc recognition LSI circuit with the on-chip analog front end, voice analysis, recognition process and system control functions. A 40 isolated-word voice recognition system can be composed o f external microphone, keyboard. 64K SRAM and some

HM772A

Abstract: HM200
Contextual Info: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP Epitaxial Planar Transistor Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC

H7805

Abstract: H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking
Contextual Info: HI-SINCERITY Spec. No. : HM200301 Issued Date : 1998.04.08 Revised Date : 2003.05.13 Page No. : 1/5 MICROELECTRONICS CORP. H431AM/BM/CM AJDUSTABLE SHUNT REGULATOR Description The H431XM series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage

Contextual Info: SPECIFICATIONS Power Connector HM20 Series Vertical, T /H Type 4.20mm x 4.20mm Grid [.165” x .165” ] Mechanical Contact Retention Force: 0.91kg min. Electrical Voltage Rating: 600V Current Rating: 10A Dielectric Withstanding Voltage: 1500V AC Insulation Resistance: 1000MΩ

HM200

Abstract: HM117
Contextual Info: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching applications.

Contextual Info: HUALON MICROELECTRONICS E4E D I l i n HM2054 ^s?= = = g PCM SPEECH SYNTHESIZER 1C 45*18041 0DDD0E7 7 • /3 HM2068 /WCMSPEECH SYNTHESIZER 1C Features Feature * Single power supply 3.0V-5.0V. * 3-4 seconds voice capacity. * Voice duration is separated to 6 sections with

strobo led

Abstract: HM1300 MARKING BL SOT89
Contextual Info: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM1300 Silicon PNP Epitaxial Type Transistor Description • Strobo Flash Applications • Medium Power Amplifier Applications SOT-89

HM112

Abstract: HM200102
Contextual Info: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching applications.

HM200

Abstract: HM669A
Contextual Info: HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 1/4 MICROELECTRONICS CORP. HM669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HM649A SOT-89 Absolute Maximum Ratings TA=25°C

Contextual Info: HUALON MICROELECTRONICS S4E D m m HM3701 MSTfiOMl □□000E4 1 £g5W 3 99-/3 HM2003 I0UCHSENSITIVEDIMMER speaker-dependent voice-recognition ic • • * Features Feature * Operated on 50Hz/60Hz line frequency in one chip. * Continous brightness decay time is 6 sec and

OC 140 germanium transistor

Abstract: germanium transistors NPN HM879 Germanium Transistor
Contextual Info: HI-SINCERITY Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. SOT-89 Features • Charger-up time is about 1 mS faster than of a germanium transistor.

HBT169M

Abstract: HM200
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4 HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These