HM10480 Search Results

Contextual Info: HM10480L 16,384-words X 1-bit Fully Decoded Random Access Memory The H M 1 0 4 8 0 L is E C L 10K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed and low power systems such as control/buffer and main storages. The H M 1 0 4 8 0 L ¡s encapsulated in cerdip-20 pin package.

Contextual Info: HM10480,HM10480F 16,384-w ords x 1-bit Fully Decoded Random Access Mem ory The H M 1 0 4 8 0 is EC L 10K com patible, 16,384-words x 1-bit, read/w rite random access memory developed fo r high speed HM 104S0 systems such as scratch pads and co n tro l/b u ffer storages.

Contextual Info: HM10480,HM10480F 16,384-words x 1-bit Fully Decoded Random Access Memory The H M 10480 is ECL 10K com patible, 16,384-words x 1-bit, read/w rite random access m em ory developed fo r high speed systems such as scratch pads and c o n tro l/b u ffe r storages.

Contextual Info: HM10480-15.HM10480F-15 16,384-words x 1-bit Fully Decoded Random Access Memory The HM10480 is ECL 10K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process uses the Hitachi's low capacitance, oxide

Contextual Info: HM10480,HM10480F 16,384-words x i-bit Fully Decoded Random A cce ss Memory The H M 1 0 4 8 0 is E C L 10 K compatible, 16,384-words x 1-bit, read/write random access m em ory developed for high speed systems such as scratch pads and control/buffer storages.

CK 77-1 3

Contextual Info: H M 1 0 4 3 - 1 5 , H M 1 0 4 8 - 2 16,384-words x 1-bit Fully Decoded Random Access Memory The HM10480 is E C L 10K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storages.

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

HD10131

Abstract: HD10125 HD10231 HD10116 HD100112 HD10K HD10130 HM10474
Contextual Info: CONTENTS • G E N E R A L I N F O R M A T I O N . 4 • Definition of Letter Symbols and Abbreviations.

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

Contextual Info: HM 1 0 4 8 0 -1 5 ,HM 10480F -15 16,384-words x 1-bit Fully Decoded Random Access Memory The H M 1 0 4 8 0 is ECL 10K com patible, 16,384-words x 1-bit, read/write random access memory developed for high speed H M 1 0 4 8 0 -1 5 systems such as scratch pads and co n tro l/b u ffer storages.

10480L

Contextual Info: H M 10480L 16,384-wordi X 1-bit Fully Decoded Random Access Memory The H M 10480L is E C L 10K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed and low power systems such as control/buffer and main storages. The H M 10480L is encapsulated in cerdip-20 pin package.

27c301

Abstract: HM6788P-25 HM6788
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.