HJC 22 Search Results

20-561

Abstract: axp smd
Contextual Info: PD-20561 05/98 International IOR Rectifier 8TQ.S SERIES SCHOTTKY RECTIFIER 8 Amp D2Pak SMD-220 Major Ratings and Characteristics Description/Features Characteristics 8TQ.S Units lF(AVj Rectangular 8 A 80 to 100 V waveform V R RM r a n 9 e T h e 8 T Q .S S chottky rectifier series has been optim ized for

Contextual Info: EUPEC S5E ]> 34032^7 ÜÜÜQSSa ^SQ M U P E C A 518 S - T ^ Z S - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V V 15 V 50 Vdrm Vrrm Vrrm C

Contextual Info: Bulletin 127095 rev. A 08/97 International IÖ R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery lim e characteristics ■ Electrically isolated base plate I Industrial standard package ■ S im plitied m echanical designs, rapid assem bly

m073

Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

Contextual Info: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS

25Q256

Contextual Info: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C

Contextual Info: INTERNATIONAL RECTIFIER LSE J> m 4 Ô 5 5 45 2 0 0 1 7 4 7 D 345 m iHR PD-2.280 International B Rectifier 220CNQ030 SCHOTTKY RECTIFIER 220 Amp Major Ratings and Characteristics Characteristics lp AV Rectangular Description/Features 220CNQ030 Units 220 A 30

10-32-UNF-2A

Contextual Info: Bulletin 120204 10/96 Inte rn ation al IÖ R Rectifier 16F R SERIES STANDARD RECOVERY DIODES Stud Version Features 16 A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

Contextual Info: Bulletin 12021/A International [^Rectifier 3oohf R s e r i e s STANDARD RECOVERY DIODES Stud Version 300A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 200V V RRM ■ S tu d c a th o d e and s tu d a n o d e v e rs io n

EUPEC powerblock

Abstract: 082c
Contextual Info: bl E D EUPEC 34032T7 000127G bTS « U P E C DD 175 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 2800,3000 3200 3400 V V V 100 V I frmsm 350 A I favm 175 223 A A Periodische Spitzensperrspannung repetitive peak reverse

BUZ36

Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

6cw 50

Abstract: marking 6cw 6cw marking 6cw 03 6CW 11 6CW 39 ako 451 6cw 74 6CW 3 6cw 81
Contextual Info: PD-20560 rev. B 10/98 International I R Rectifier 6CWQ03FN SCHOTTKY RECTIFIER 7 Amp D-Pak TO-252AA Major Ratings and Characteristics Description/Features Characteristics 6CWQ03FN Units ' f (AV) Rectan9ular waveform 7 A 30 V V RRM ' fsm @ tp = 5 ^ s s in e

BUZ11

Contextual Info: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics

Contextual Info: E U PE C 5SE 1> 34032^7 OOOOSbb T2 7 • U P E C A 930 S 2000 Typenreihe/Type range 1600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm Vrrm tp = 1 iS Vrrm(C Maximum permissible values V 1600.2000 V 20 V 50 Itrmsm Itavm Itsm

D0-203AB

Abstract: d-u203 70HRR
Contextual Info: Bulletin 120202 10/96 International IO R Rectifier 70HF R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 70 A High surge current capability ■ Designed lor a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available

Contextual Info: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B

DT25N

Abstract: tt 25 n powerblock
Contextual Info: blE D EUPEC BMGBSI? OGÜiaHb S U «IIPEC TT 25 N, TD 25 N, DT 25 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorw ärts- und R ückw ärts-Spitzensperrspannung repetitive peak forward off-state

CP24

Abstract: RQK210
Contextual Info: EUPEC S2E ]> 34032*17 DD0GÖ3G 514 « U P E C T1900N ' s Typenreihe/Type range T 1900 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm, Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom

6cw 50

Abstract: marking 6cw 6CW 18 6cw 74 6CW 11 6cw 81 6cw 39 6cw 03 6cw marking 6cw 01
Contextual Info: PD-20529 rev. B 10/98 International I R Rectifier 6CWQ10FN SCHOTTKY RECTIFIER 7 Amp D-Pak TO-252AA Major Ratings and Characteristics Description/Features Characteristics 6CWQ10FN Units ' f (AV) Rectan9ular waveform 7 A 100 V V RRM ' fsm @ tp = 5 ^ s s in e

Contextual Info: □ IXYS MC0450 High Power Single Thyristor Module Symbol Test C onditions Itrms Itav T vj - TVjm Tc = 85°C; 180° sine Itsm TVj — 45°C v R= o l*t di/dt cr 750 A Itav = 464 A VRRM = 2000-2200 V Itr m s Maximum Ratings 750 464 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)

IRGBC-20

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate

FLC 100

Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Contextual Info: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

tv lg LCD

Abstract: T1052 RA002
Contextual Info: E llP E C S5E » 34032^7 0GG0537 12b B U P E C T 1052 S T ^ z s -z t Typenreihe/Type range 600 1100 1000 800 1200 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1200 V 600.1200 V drm Vrrm 2200 1052