HJC 22 Search Results

r-12kn

Abstract: CZ-200 cz300r
Contextual Info: EUPEC Power transistor modules Type VcEXi VcBO V VsEO V ebo lc IcRM ton R,hjc t, ts RthCK tv, max O utline DC tp = 1 ms V V B 34032=17 0001347 ITO «U P E C b lE D 25 °C 125-C 25 °C 125°C 25 °C 125°C 25 °C 125°C typ. min. typ. max. typ. max. typ. max.

thyristor tt 18 N 1100

Abstract: thyristor tt 18 f 1000 EUPEC tt 93 n EUPEC tt 93 n 14 thyristor tt 45 f 1100 thyristor tt 18 n 800 TD 42 F thyristor TD 42 F EUPEC TD 25 eupec tt 92 n 12
Contextual Info: Fast thyristor modules Type V drm iH E EUPEC It r m s m I tsm /¡2dt I tavm ^ c V TO> •t '»,= tvj max tv, = 34D35T7 DOGOllt. Ö7fl D (di/dt cr (dv/dt)cr R,hjc DIN IEC 747-6 DIN IEC 747-6 sin. V rrm 10 ms, 180 °el tvj max sin. A A V 10 ms, tvj max A/°C

kn transistor

Abstract: r-12kn CC 50 R 06
Contextual Info: EUPEC Power transistor modules Type VcEXi VsEO V ebo lc IcRM B blE » ton • 3 H D 3 2 CJ7 000131}? 1T0 « U P E C t, ts R,hjc RthCK tv, max Outline DC VcBO tp = 1 ms 25 °C typ. 125°C 25 °C 125°C 25 °C 125°C 25 °C 125°C min. typ. max. typ. max. typ.

Contextual Info: Type V drm V rrm Itr m sm Itsm 4TE D EU PEC Fast asymmetric thyristor modules /¡2dt ^TAVM^C V TO It (di/dt)cr (dv/dt)cr V) R ,hjc (V r r m (C) V V A UPEC T-3.3'0/ ^ th C K J tv j m a x 10 ms, 10 ms, tv, D IN D IN tyi max 180 °el Sin. t„ = ^vj max tv, max

DIODE B-10

Abstract: AD96S AD95S AD220S 95.85.1 AD60F asymmetric thyristor D15C
Contextual Info: Fast asymmetric thyristor modules Type V drm V rrm It r m s m Itsm EUPEC / i 2dt mte d It a v m / * c V TO It (di/dt)cr • 34032 T 7 D e m o n ? ?om ■ V) (dv/dt)cr R,hjc ( V r r m (C) V V A T-^yoi UPEC | J ^thCK ^vj m ax OlJtfin 10 ms, 10 ms, 180 °el

20-561

Abstract: axp smd
Contextual Info: PD-20561 05/98 International IOR Rectifier 8TQ.S SERIES SCHOTTKY RECTIFIER 8 Amp D2Pak SMD-220 Major Ratings and Characteristics Description/Features Characteristics 8TQ.S Units lF(AVj Rectangular 8 A 80 to 100 V waveform V R RM r a n 9 e T h e 8 T Q .S S chottky rectifier series has been optim ized for

Contextual Info: EUPEC S5E ]> 34032^7 ÜÜÜQSSa ^SQ M U P E C A 518 S - T ^ Z S - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V V 15 V 50 Vdrm Vrrm Vrrm C

Contextual Info: Bulletin 127095 rev. A 08/97 International IÖ R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery lim e characteristics ■ Electrically isolated base plate I Industrial standard package ■ S im plitied m echanical designs, rapid assem bly

m073

Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

Contextual Info: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS

D476

Abstract: D-476 32ctq030 D161
Contextual Info: PD-2.267 International |k ?r ]Rectifier 32CTQ030 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 32CTQ030 Units Characteristics The 32CTQ030 center tap Schottky rectifier has been opti­ mized for very low forward voltage drop, with moderate

EUPEC TT 105 N 12

Abstract: EUPEC TT 105 N 14 EUPEC tt 105 N 16 T698F t510s T760S EUPEC TT 56 n 16 A358S A618 T128F
Contextual Info: EUPEC 52E D A 618 S 34032*17 ÜDGGSbE 3 fll «U PEC " F 2 5 - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm V r r m C

Contextual Info: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

25Q256

Contextual Info: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 40 B N channel Enhancem ent mode Avalanche-rated Type ^DS 1D ^DS on Package 1) O rdering Code BUZ 40 B 500 V 8.5 A 0.8 a TO-220 AB C67078-S1305-A4 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 35 'C

10-32-UNF-2A

Contextual Info: Bulletin 120204 10/96 Inte rn ation al IÖ R Rectifier 16F R SERIES STANDARD RECOVERY DIODES Stud Version Features 16 A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

Contextual Info: Bulletin 12021/A International [^Rectifier 3oohf R s e r i e s STANDARD RECOVERY DIODES Stud Version 300A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 200V V RRM ■ S tu d c a th o d e and s tu d a n o d e v e rs io n

EUPEC powerblock

Abstract: 082c
Contextual Info: bl E D EUPEC 34032T7 000127G bTS « U P E C DD 175 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 2800,3000 3200 3400 V V V 100 V I frmsm 350 A I favm 175 223 A A Periodische Spitzensperrspannung repetitive peak reverse

BUZ36

Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD = 200 V = 1 3 .5 A ^ D S o n = • 0 -2 BUZ 31 TO -220 AB Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 31 C67078-S1304-A2 G Maximum Ratings Parameter Symbol

DIODE BUZ 94

Contextual Info: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

GP 809 DIODE

Abstract: BUZ,271
Contextual Info: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

tt218

Abstract: MTH40N06
Contextual Info: MTH40N06 MTH40N06FI /= T SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTH40N06 MTH40N06FI VDss 60 V 60 V ^DS on 0.028 « 0.028 n •d 40 A 26 A • VERY LOW ON-LOSSES • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ • LOW DRIVE ENERGY FOR EASY DRIVE