HJC 22 Search Results

Contextual Info: Bulletin 127095 rev. A 08/97 International IÖ R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery lim e characteristics ■ Electrically isolated base plate I Industrial standard package ■ S im plitied m echanical designs, rapid assem bly

m073

Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.

Contextual Info: INTERNATIONAL RECTIFIER LSE J> m 4 Ô 5 5 45 2 0 0 1 7 4 7 D 345 m iHR PD-2.280 International B Rectifier 220CNQ030 SCHOTTKY RECTIFIER 220 Amp Major Ratings and Characteristics Characteristics lp AV Rectangular Description/Features 220CNQ030 Units 220 A 30

10-32-UNF-2A

Contextual Info: Bulletin 120204 10/96 Inte rn ation al IÖ R Rectifier 16F R SERIES STANDARD RECOVERY DIODES Stud Version Features 16 A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

Contextual Info: Bulletin 12021/A International [^Rectifier 3oohf R s e r i e s STANDARD RECOVERY DIODES Stud Version 300A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 200V V RRM ■ S tu d c a th o d e and s tu d a n o d e v e rs io n

BUZ36

Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C

6cw 50

Abstract: marking 6cw 6cw marking 6cw 03 6CW 11 6CW 39 ako 451 6cw 74 6CW 3 6cw 81
Contextual Info: PD-20560 rev. B 10/98 International I R Rectifier 6CWQ03FN SCHOTTKY RECTIFIER 7 Amp D-Pak TO-252AA Major Ratings and Characteristics Description/Features Characteristics 6CWQ03FN Units ' f (AV) Rectan9ular waveform 7 A 30 V V RRM ' fsm @ tp = 5 ^ s s in e

BUZ11

Contextual Info: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics

D0-203AB

Abstract: d-u203 70HRR
Contextual Info: Bulletin 120202 10/96 International IO R Rectifier 70HF R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 70 A High surge current capability ■ Designed lor a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available

Contextual Info: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B

DT25N

Abstract: tt 25 n powerblock
Contextual Info: blE D EUPEC BMGBSI? OGÜiaHb S U «IIPEC TT 25 N, TD 25 N, DT 25 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorw ärts- und R ückw ärts-Spitzensperrspannung repetitive peak forward off-state

IRF4431

Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Contextual Info: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity

ir 2248 mosfet n-channel

Abstract: ufn510 UFN512
Contextual Info: UFN510 UFN511 UFN512 UFN513 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • Com pact Plastic Package • Fast Sw itching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature S tability DESCRIPTION

Contextual Info: □IXYS MUBW 50-06 A7 Advanced Technical Information Converter - Brake - Inverter Module cbi2 21 D11 D13 £ 2Ï 1 D12 k 22 D15 1£ 2 >""""^1 3 1 D16 D14 1£ 2Ï 23 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V •d a v m = 44 A lC

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30

180NQ

Contextual Info: INTERNATIONAL RECTIFIER bSE D WÊÊ 4Ö55452 DOlTMm Slb M I N R PD-2.227A International Rectifier i s o n q . s e r i e s SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features Characteristics 180NQ. Units lF AV Rectangular

Contextual Info: PD - 2 .5 3 2 International IS R Rectifier PRELIMINARY SCHOTTKY RECTIFIER 35 Amp Major Ratings and Characteristics Characteristics 12CLQ150 Desciption/Features 12CLQ150 Units If^av R ectangular waveform 35 A V rrm 150 V Ifsm @ tp = 8.3ms sine 200 A VF @ 15Apk, T j = 125 °C

DIN 14574

Contextual Info: ÔÔD ÔSBSbOS Q 0 m S 7 Q 4 * S I E G D 880 14570 D BUZ 37 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel = 200 V Draln-source voltage K>s Continuous drain current = 13 A h Draln-source on-resistance ^DS on a 0,2 n Description SIPMOS, N-channel, enhancement mode

EUPEC powerblock

Abstract: dd 76 N powerblock eupec dd 76 n 1200 powerblock DD 76 N 1200
Contextual Info: EUPEC blE D • 34032^7 G0012M3 b74 H U P E C DD 61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t vj — Stoßspitzenspannung non repetitive peak

Contextual Info: Bulletin 12771 rev. D 08/97 International IOR Rectifier MT SERIES THREE PHASE BRIDGE Power Modules Features 25 A 35 A • U nive rsal, 3 w a y te rm in a ls: push-on, w ra p a rou n d or so lde r ■ H igh th e rm a l co n d u c tiv ity package, e le c tric a lly Insulated ca se

35T7

Abstract: rc network Eupec A 353 T510S
Contextual Info: 34032^7 0000515 5b5 * U P E C SSE D E UP EC T 509 S T 510 S Typenreihe/Type range 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1200 600. 1200 V V qrm Vrrm 800 1000 1500 510 960 9500 8400

SFH400

Contextual Info: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)

41B14

Contextual Info: S5E J> m 34032^7 0 000 Ö07 1 3 1 • U P E C T949N Typenrefhe/Type ränge T949N 400* 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, V r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom