HITACHI RF APPLICATION Search Results

Contextual Info: HITACHI/ LINEAR DEVICES SbE D • 4 4 ^ 5 0 2 O D I O S I fl ■ HA11545A-RF Modulator Description The HA11545A is included RF carrier oscillator, video modulation, FM modulator, white clip level adjustment, RF carrier and antenna switch on/off.

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low voltage operation NF = 1.3 dB typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 3SK239A

Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems HITACHI ADE-207-257 Z 1st Edition August 1998 Description The HD 15511 IF was developed for PCN (DCS 1800) cellular systems, and integrates most of the functions of a transceiver. The HD 15511 IF incorporates the bias circuit for a RF LNA, a 1st mixer, lst-IF amplifier,

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK-4 s ^ÊBÊh 4 1. Source 2. G atel 3. Gate2 4. Drain

IG2U

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK—4 .A 3 , HHptft td itltO A n ic lä f ^ 1 . Source

ha2200

Abstract: ha22003
Contextual Info: HA22003T 1.9GHz GaAs MMIC HITACHI ADE-207-192 Z 1st. Edition December 1995 Application • Suitable for Down converter of PHS (1.9GHz) Features • • • • • • Low voltage operation (3V) Low noise (7dB Typ) High conversion gain (8.5dB Typ) Built-in RF and LO matching circuits (5012)

Contextual Info: HSK277 Silicon Epitaxial Planar Diode for Tuner Band Switch HITACHI ADE-208-173B Z Rev. 2 Oct. 1, 1998 Features • Low forward resistance, (rf = 0.5i2 max) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: 1SS277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI ADE-208-301B Z Rev. 2 Sept. 1, 1998 Features • Low forward resistance. (rf = 0.5Î2 max) • Ultra small glass package (UMD) enables easy mounting and high reliability. Ordering Information

Contextual Info: HVM14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI ADE-208-083D Z Rev.4 Feb. 1, 1999 Features • Low forward resistance, (rf =7.0i2max) • Low capacitance. (C=0.25pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-700C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

pin diagram for IC 1619 30 pin

Abstract: ha32 tssop Hitachi DSA0096 HA22032T
Contextual Info: HA22032T GaAs MMIC Down Converter for Micro Wave Application ADE-207-259 Z 1st. Edition May 1998 Features • • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (3V, 9 mA typ.) Low noise (2 dB typ. @1.5 Ghz)

Contextual Info: HA22033 GaAs MMIC Low Noise Amplifier for Micro Wave Application HITACHI ADE-207-266 Z 1st. Edition October 1998 Features • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) • Low voltage and low current operation (2.7V, 1.7mA typ.)

GBF CODE

Abstract: Hitachi DSA0014
Contextual Info: HA22012 GaAs MMIC Low Noise Amplifier for Micro Wave Application ADE-207-217 Z 1st. Edition July 1996 Features • • • • • • Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.9 dB typ.)

Contextual Info: HA22012 GaAs MMIC Low Noise Amplifier for Micro Wave Application HITACHI Features • • • • • • Suitable for low noise amplifier of PHS 1.9 GHz Low voltage and low current operation (3 V, 3mA typ.) Low noise (1.9 dB typ.) High power gain (13.5 dB typ.)

ACP600

Abstract: ha2200 ha22004
Contextual Info: HA22004T 1.9GHz GaAs MMIC HITACHI ADE-207-193 Z 1st. Edition December 1995 Application • Suitable for Up converter of PHS (1.9GHz) Features • • • • • Low voltage operation (3V) High conversion gain (11.5dB Typ) Adjacent channel leakage power (—66dBc/600kHz off)

Contextual Info: HA22032T GaAs MMIC Down Converter for Micro Wave Application HITACHI Features • Suitable for down converter of Micro Wave Application 1.5 GHz • Low voltage and low current operation (3V, 9 mA typ.) • Low noise (2 dB typ. @1.5 Ghz) • High power gain (26 dB typ. @1.5 GHz)

Contextual Info: HA22022 GaAs MMIC Low Noise Amplifier for Micro Wave Application HITACHI ADE-207-227 Z 1st. Edition February 1997 Features • • • • • • Suitable for low noise amplifier of Micro Wave Application( 1.5 to 1.9GHz) Low voltage and low current operation (3 V, 3mA typ.)

Contextual Info: HA22022 GaAs MMIC Low N oise Amplifier for Micro Wave Application HITACHI ADE-207-227 Z 1st. Edition February 1997 Features • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) • Low voltage and low current operation (3V, 3mA typ.)

Contextual Info: HA22012 GaAs MMIC Low N oise Amplifier for Micro Wave Application HITACHI Features • Suitable for low noise amplifier of PHS 1.9 GHz • Low voltage and low current operation (3V, 3mA typ.) • Low noise (1.9 dB typ.) • High power gain (13.5 dB typ.)

Hitachi DSA00164

Contextual Info: HA22039 GaAs IC Low Distortion Mixer for Micro Wave Application ADE-207-271 Z Preliminary 1st. Edition August 1999 Features • • • • Suitable for low distortion of Micro Wave Application Low voltage and low current operation (3V, 7mA typ.) Low insertion loss (1.0 dB typ. @800MHz)

GBF CODE

Abstract: Hitachi DSA0096 HA22012
Contextual Info: HA22012 GaAs MMIC Low Noise Amplifier for Micro Wave Application ADE-207-217 Z 1st. Edition July 1996 Features • • • • • • Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.9 dB typ.)