HITACHI RF APPLICATION Search Results

Contextual Info: HITACHI/ LINEAR DEVICES SbE D • 4 4 ^ 5 0 2 O D I O S I fl ■ HA11545A-RF Modulator Description The HA11545A is included RF carrier oscillator, video modulation, FM modulator, white clip level adjustment, RF carrier and antenna switch on/off.

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Amplifire

Contextual Info: HITACHI 2SC4964-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features <# • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol

application of LC oscillator

Abstract: 2SC4264
Contextual Info: 2SC4264 Silicon NPN Epitaxial HITACHI Application VHF / UHF RF amplifier. Local oscillator, Mixer Outline CMPAK ^ ^ 2 1. Emitter 2. Base 3. Collector 569 2SC4264 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCB0

2SC4966

Abstract: Amplifire
Contextual Info: HITACHI 2SC4966 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features • Low Ron and high performance for RF switch. • Capable of high density mounting. <#• Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol

2SC4259

Contextual Info: 2SC4259 Silicon NPN Epitaxial HITACHI Application UHF RF amplifier Outline CMPAK 2 1. Emitter 2. Base 3. Collector 557 2SC4259 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 30 V Collector to emitter voltage VcEO

ha2100

Contextual Info: HA21009MS BS Tuner Use GaAs IC Preliminary HITACHI Application September 1993 Package Information • GaAs m onolithic IC Type No._ Package • BS tuner HA21009MS MP-18A Features • 5V Operation • BS tuner IC consists o f mixer, RF AGC, IF AGO

rf if amplifier

Contextual Info: 2SC3494 Silicon NPN Epitaxial Planar HITACHI Application FM RF/IF amplifier Outline SPAK ! •I 23 490 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 30 V Collector to emitter voltage

Contextual Info: 3SK239A GaAs Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low vol tage operation NF = 1.3 dB Typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 1093 3SK239A

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low voltage operation NF = 1.3 dB typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 3SK239A

Contextual Info: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems HITACHI ADE-207-257 Z 1st Edition August 1998 Description The HD 15511 IF was developed for PCN (DCS 1800) cellular systems, and integrates most of the functions of a transceiver. The HD 15511 IF incorporates the bias circuit for a RF LNA, a 1st mixer, lst-IF amplifier,

Contextual Info: 3SK228 GaAs Dual Gate MES FET HITACHI ADE-208-280 1st. Edition Application UH F TV tuner RF Am plifier Outline MPAK-4 1. 2. 3. 4. Source Gatel Gate2 Drain 1087 3SK228 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vqs

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK-4 s ^ÊBÊh 4 1. Source 2. G atel 3. Gate2 4. Drain

Contextual Info: HITACHI 2SC4965 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CM PAK Features t • Low Ron and high performance for RF switch. • Capable of high density mounting. ^ . 2 Table 1 A bsolu te M a x im u m R atings Ta = 25°C

PF0145

Abstract: GSM signal processing block z650 hitachi saw GSM TCXO 900 MHz
Contextual Info: GSM RF System Evaluation Board G SM is a digital cellular telep h one application system using the H D 155101F • Variable capacitance diode: HVU355 system im ple­ and Hitachi GSM sem iconductors. The m ented in Europe, and currently System EvB is designed to verify the

ha2200

Abstract: ha22003
Contextual Info: HA22003T 1.9GHz GaAs MMIC HITACHI ADE-207-192 Z 1st. Edition December 1995 Application • Suitable for Down converter of PHS (1.9GHz) Features • • • • • • Low voltage operation (3V) Low noise (7dB Typ) High conversion gain (8.5dB Typ) Built-in RF and LO matching circuits (5012)

Contextual Info: 3SK290 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-271 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK-4 1. 2. 3. 4. 1098 Source

Contextual Info: HSK277 Silicon Epitaxial Planar Diode for Tuner Band Switch HITACHI ADE-208-173B Z Rev. 2 Oct. 1, 1998 Features • Low forward resistance, (rf = 0.5i2 max) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: HITACHI 3SK297-Silicon N Channel Dual Gate MOS FET Application UHF / VHF RF amplifier MPAK-4 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation "^4 1. Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute M axim um Ratings

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

Contextual Info: 1SS277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI ADE-208-301B Z Rev. 2 Sept. 1, 1998 Features • Low forward resistance. (rf = 0.5Î2 max) • Ultra small glass package (UMD) enables easy mounting and high reliability. Ordering Information

Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-387 Ist. Edition Application U H F RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 M H z • Capable o f low voltage operation Outline MPAK-4 1. 2. 3. 4. Source G atel Gate2

Contextual Info: HITACHI 3SK237-Silicon N-Channel Dual Gâte MOSFET Application C M P A K -4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage opération 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C